RUMWUMW AO3403A30V P-Channel MOSFETGeneral Description SOT23 The AO3403 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge. This device issuitable for use as a load switch or in PWM applications.Product Summary1. GATE VDS-30V2. SOURCE ID (at VGS=-10V) -2.6A3. DRAIN RDS(ON) (at VGS=-10V)

AO340330V P-Channel MOSFETGeneral Description Product SummaryVDSThe AO3403 uses advanced trench technology to provide -30Vexcellent RDS(ON) and low gate charge. This device is ID (at VGS=-10V) -2.6Asuitable for use as a load switch or in PWM applications. RDS(ON) (at VGS=-10V)

Shenzhen Tuofeng Semiconductor Technology Co., Ltd AO3403AO3403P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO3403 uses advanced trench technology to VDS (V) = -30Vprovide excellent RDS(ON) and low gate charge. This ID = -2.6 A (VGS = -10V)device is suitable for use as a load switch or in PWM RDS(ON)

SMD Type MOSFETP-Channel MOSFETAO3403 (KO3403)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.1 Features3 VDS (V) =-30V ID =-2.6 A (VGS =-10V) RDS(ON) 115m (VGS =-10V)1 2+0.02+0.10.15 -0.020.95 -0.1 RDS(ON) 150m (VGS =-4.5V)+0.11.9-0.2 RDS(ON) 200m (VGS =-2.5V)DD1. Gate2. Source3. DrainGGSS Absolut

SMD Type MOSFETP-Channel MOSFETAO3403 (KO3403)SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features VDS (V) =-30V ID =-2.6 A (VGS =-10V)1 2 RDS(ON) 115m (VGS =-10V)+0.050.95+0.1-0.1 0.1 -0.01 RDS(ON) 150m (VGS =-4.5V)1.9+0.1-0.1 RDS(ON) 200m (VGS =-2.5V)1. GateDD2. Source3. DrainGGSS Absolute Max