AO3403A MOSFET Datasheet: P-Ch, 30V, 2.6A. Full specification with pinout and replacement list

AO3403A Specs and Replacement

Type Designator: AO3403A

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 2.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.5 nS

Cossⓘ - Output Capacitance: 37 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.115 Ohm

Package: SOT23

AO3403A substitution

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AO3403A datasheet

..1. Size:370K umw-ic
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8.1. Size:494K aosemi
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AO3403 30V P-Channel MOSFET General Description Product Summary VDS The AO3403 uses advanced trench technology to provide -30V excellent RDS(ON) and low gate charge. This device is ID (at VGS=-10V) -2.6A suitable for use as a load switch or in PWM applications. RDS(ON) (at VGS=-10V) ... See More ⇒

8.2. Size:308K shenzhen
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Shenzhen Tuofeng Semiconductor Technology Co., Ltd AO3403 AO3403 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3403 uses advanced trench technology to VDS (V) = -30V provide excellent RDS(ON) and low gate charge. This ID = -2.6 A (VGS = -10V) device is suitable for use as a load switch or in PWM RDS(ON) ... See More ⇒

8.3. Size:2405K kexin
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SMD Type MOSFET P-Channel MOSFET AO3403 (KO3403) SOT-23-3 Unit mm +0.2 2.9-0.1 +0.1 0.4 -0.1 Features 3 VDS (V) =-30V ID =-2.6 A (VGS =-10V) RDS(ON) 115m (VGS =-10V) 1 2 +0.02 +0.1 0.15 -0.02 0.95 -0.1 RDS(ON) 150m (VGS =-4.5V) +0.1 1.9-0.2 RDS(ON) 200m (VGS =-2.5V) D D 1. Gate 2. Source 3. Drain G G S S Absolut... See More ⇒