AO3409A Todos los transistores

R UMW UMW AO3409A UMW AO3409A Features SOT 23 VDS (V) = -30V ID = -2.6 A (VGS = -10V) RDS(ON)

AO3409 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3409 uses advanced trench technology to VDS (V) = -30V provide excellent RDS(ON) and low gate charge. This ID = -2.6 A (VGS = -10V) device is suitable for use as a load switch or in PWM RDS(ON)

AO3409 30V P-Channel MOSFET General Description Product Summary VDS -30V The AO3409 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is ID (at VGS=-10V) -2.6A suitable for use as a load switch or in PWM applications. RDS(ON) (at VGS=-10V)

Shenzhen Tuofeng Semiconductor Technology Co., Ltd AO3409 AO3409 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3409 uses advanced trench technology to VDS (V) = -30V provide excellent RDS(ON) and low gate charge. This ID = -2.6 A (VGS = -10V) device is suitable for use as a load switch or in PWM RDS(ON)

SMD Type MOSFET P-Channel Enhancement Mode Field Effect Transistor AO3409 (KO3409) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 Features 3 VDS (V) = -30V ID = -2.6 A (VGS = -10V) 1 2 RDS(ON)

SMD Type MOSFET P-Channel Enhancement MOSFET AO3409 (KO3409) SOT-23-3 Unit mm +0.2 2.9-0.1 +0.1 0.4 -0.1 Features 3 VDS (V) = -30V ID = -2.6 A (VGS = -10V) RDS(ON)

SMD Type MOSFET P-Channel Enhancement MOSFET AO3409 (KO3409) SOT-23-3 Unit mm +0.2 2.9-0.1 +0.1 0.4 -0.1 Features 3 VDS (V) = -30V ID = -2.6 A (VGS = -10V) RDS(ON)