AO3409A MOSFET Datasheet: P-Ch, 30V, 2.6A. Full specification with pinout and replacement list

AO3409A Specs and Replacement

Type Designator: AO3409A

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.2 nS

Cossⓘ - Output Capacitance: 50.3 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm

Package: SOT23

AO3409A substitution

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AO3409A datasheet

..1. Size:1622K umw-ic
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R UMW UMW AO3409A UMW AO3409A Features SOT 23 VDS (V) = -30V ID = -2.6 A (VGS = -10V) RDS(ON) ... See More ⇒

8.1. Size:100K 1
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AO3409 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3409 uses advanced trench technology to VDS (V) = -30V provide excellent RDS(ON) and low gate charge. This ID = -2.6 A (VGS = -10V) device is suitable for use as a load switch or in PWM RDS(ON) ... See More ⇒

8.2. Size:234K aosemi
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AO3409 30V P-Channel MOSFET General Description Product Summary VDS -30V The AO3409 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is ID (at VGS=-10V) -2.6A suitable for use as a load switch or in PWM applications. RDS(ON) (at VGS=-10V) ... See More ⇒

8.3. Size:434K shenzhen
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Shenzhen Tuofeng Semiconductor Technology Co., Ltd AO3409 AO3409 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3409 uses advanced trench technology to VDS (V) = -30V provide excellent RDS(ON) and low gate charge. This ID = -2.6 A (VGS = -10V) device is suitable for use as a load switch or in PWM RDS(ON) ... See More ⇒