AO3409A MOSFET. Datasheet pdf. Equivalent
Type Designator: AO3409A
Marking Code: A90T
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 1.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 2.6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 6.8 nC
trⓘ - Rise Time: 3.2 nS
Cossⓘ - Output Capacitance: 50.3 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
Package: SOT23
AO3409A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AO3409A Datasheet (PDF)
ao3409a.pdf
RUMWUMW AO3409AUMW AO3409AFeaturesSOT23 VDS (V) = -30VID = -2.6 A (VGS = -10V)RDS(ON)
ao3409 ao3409l.pdf
AO3409P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO3409 uses advanced trench technology to VDS (V) = -30Vprovide excellent RDS(ON) and low gate charge. This ID = -2.6 A (VGS = -10V)device is suitable for use as a load switch or in PWM RDS(ON)
ao3409.pdf
AO340930V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AO3409 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge. This device is ID (at VGS=-10V) -2.6Asuitable for use as a load switch or in PWM applications. RDS(ON) (at VGS=-10V)
ao3409.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd AO3409AO3409P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO3409 uses advanced trench technology to VDS (V) = -30Vprovide excellent RDS(ON) and low gate charge. This ID = -2.6 A (VGS = -10V)device is suitable for use as a load switch or in PWM RDS(ON)
ao3409.pdf
SMD Type MOSFETP-Channel Enhancement ModeField Effect TransistorAO3409 (KO3409)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.1Features3VDS (V) = -30VID = -2.6 A (VGS = -10V)1 2RDS(ON)
ao3409 ko3409.pdf
SMD Type MOSFETP-Channel Enhancement MOSFETAO3409 (KO3409)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.1Features 3VDS (V) = -30VID = -2.6 A (VGS = -10V)RDS(ON)
ao3409-3.pdf
SMD Type MOSFETP-Channel Enhancement MOSFETAO3409 (KO3409)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.1Features 3VDS (V) = -30VID = -2.6 A (VGS = -10V)RDS(ON)
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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