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AO3413A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AO3413A
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.4 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 36 nS
   Cossⓘ - Capacitancia de salida: 80 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm
   Paquete / Cubierta: SOT23
 

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AO3413A Datasheet (PDF)

 ..1. Size:356K  umw-ic
 ao3413a.pdf pdf_icon

AO3413A

RUMWUMW AO3413A20V P-Channel MOSFETSOT23 General DescriptionGeneral DescriptionThe AO3413 uses advanced trench technology toThe AO3413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and provide excellent RDS(ON), low gate charge andoperation with gate voltages as low as 1.8V. Thisoperation with gate voltages as low as 1.8V. This device

 8.1. Size:192K  1
 ao3413l.pdf pdf_icon

AO3413A

AO3413P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO3413/L uses advanced trench technology to VDS (V) = -20Vprovide excellent RDS(ON), low gate charge andID = -3 A (VGS = -4.5V)operation with gate voltages as low as 1.8V. ThisRDS(ON)

 8.2. Size:456K  aosemi
 ao3413.pdf pdf_icon

AO3413A

AO341320V P-Channel MOSFETGeneral Description FeaturesGeneral Description FeaturesThe AO3413 uses advanced trench technology to VDS = -20VThe AO3413 uses advanced trench technology to VDS = -20Vprovide excellent RDS(ON), low gate charge and ID = -3A (VGS = -4.5V)provide excellent RDS(ON), low gate charge and ID = -3A (VGS = -4.5V)operation with gate voltages as low as 1.8V. This

 8.3. Size:2287K  kexin
 ao3413-3.pdf pdf_icon

AO3413A

SMD Type MOSFETP-Channel MOSFETAO3413 (KO3413)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.13 Features VDS (V) =-20V ID =-3 A (VGS =-4.5V)1 2 RDS(ON) 80m (VGS =-4.5V)+0.02+0.10.15 -0.020.95 -0.1 RDS(ON) 100m (VGS =-2.5V) +0.11.9-0.2 RDS(ON) 130m (VGS =-1.8V)1. Gate2. SourceDD3. DrainGGSS Absolute

MOSTRAR MÁS

Otros transistores... IRLR8103VTR , IRLR8729TR , 100N03A , 30N03A , 35N06 , AO3402A , AO3403A , AO3409A , IRFB4115 , AO3414A , AO3416A , AO3422A , AO3423A , AO3442A , SI2301B , SI2302B , SI2304A .

History: RFK25P10 | AO3416A | 2SK2200 | 2SK715U-AC | AON6572 | TPCP8204 | RFD7N10LE

 

 
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