AO3413A Todos los transistores

 

AO3413A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AO3413A

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.4 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 36 nS

Cossⓘ - Capacitancia de salida: 80 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm

Encapsulados: SOT23

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AO3413A datasheet

 ..1. Size:356K  umw-ic
ao3413a.pdf pdf_icon

AO3413A

R UMW UMW AO3413A 20V P-Channel MOSFET SOT 23 General Description General Description The AO3413 uses advanced trench technology to The AO3413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This operation with gate voltages as low as 1.8V. This device

 8.1. Size:192K  1
ao3413l.pdf pdf_icon

AO3413A

AO3413 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3413/L uses advanced trench technology to VDS (V) = -20V provide excellent RDS(ON), low gate charge and ID = -3 A (VGS = -4.5V) operation with gate voltages as low as 1.8V. This RDS(ON)

 8.2. Size:456K  aosemi
ao3413.pdf pdf_icon

AO3413A

AO3413 20V P-Channel MOSFET General Description Features General Description Features The AO3413 uses advanced trench technology to VDS = -20V The AO3413 uses advanced trench technology to VDS = -20V provide excellent RDS(ON), low gate charge and ID = -3A (VGS = -4.5V) provide excellent RDS(ON), low gate charge and ID = -3A (VGS = -4.5V) operation with gate voltages as low as 1.8V. This

 8.3. Size:2287K  kexin
ao3413-3.pdf pdf_icon

AO3413A

SMD Type MOSFET P-Channel MOSFET AO3413 (KO3413) SOT-23-3 Unit mm +0.2 2.9-0.1 +0.1 0.4 -0.1 3 Features VDS (V) =-20V ID =-3 A (VGS =-4.5V) 1 2 RDS(ON) 80m (VGS =-4.5V) +0.02 +0.1 0.15 -0.02 0.95 -0.1 RDS(ON) 100m (VGS =-2.5V) +0.1 1.9-0.2 RDS(ON) 130m (VGS =-1.8V) 1. Gate 2. Source D D 3. Drain G G S S Absolute

Otros transistores... IRLR8103VTR , IRLR8729TR , 100N03A , 30N03A , 35N06 , AO3402A , AO3403A , AO3409A , P55NF06 , AO3414A , AO3416A , AO3422A , AO3423A , AO3442A , SI2301B , SI2302B , SI2304A .

History: 2SK1671 | MCH5908

 

 

 


History: 2SK1671 | MCH5908

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