AO3413A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AO3413A
Тип транзистора: MOSFET
Полярность: P
Максимальная рассеиваемая мощность (Pd): 1.4 W
Предельно допустимое напряжение сток-исток |Uds|: 20 V
Предельно допустимое напряжение затвор-исток |Ugs|: 8 V
Пороговое напряжение включения |Ugs(th)|: 1 V
Максимально допустимый постоянный ток стока |Id|: 3 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 8.5 nC
Время нарастания (tr): 36 ns
Выходная емкость (Cd): 80 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.08 Ohm
Тип корпуса: SOT23
AO3413A Datasheet (PDF)
ao3413a.pdf
RUMWUMW AO3413A20V P-Channel MOSFETSOT23 General DescriptionGeneral DescriptionThe AO3413 uses advanced trench technology toThe AO3413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and provide excellent RDS(ON), low gate charge andoperation with gate voltages as low as 1.8V. Thisoperation with gate voltages as low as 1.8V. This device
ao3413l.pdf
AO3413P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO3413/L uses advanced trench technology to VDS (V) = -20Vprovide excellent RDS(ON), low gate charge andID = -3 A (VGS = -4.5V)operation with gate voltages as low as 1.8V. ThisRDS(ON)
ao3413.pdf
AO341320V P-Channel MOSFETGeneral Description FeaturesGeneral Description FeaturesThe AO3413 uses advanced trench technology to VDS = -20VThe AO3413 uses advanced trench technology to VDS = -20Vprovide excellent RDS(ON), low gate charge and ID = -3A (VGS = -4.5V)provide excellent RDS(ON), low gate charge and ID = -3A (VGS = -4.5V)operation with gate voltages as low as 1.8V. This
ao3413-3.pdf
SMD Type MOSFETP-Channel MOSFETAO3413 (KO3413)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.13 Features VDS (V) =-20V ID =-3 A (VGS =-4.5V)1 2 RDS(ON) 80m (VGS =-4.5V)+0.02+0.10.15 -0.020.95 -0.1 RDS(ON) 100m (VGS =-2.5V) +0.11.9-0.2 RDS(ON) 130m (VGS =-1.8V)1. Gate2. SourceDD3. DrainGGSS Absolute
ao3413.pdf
SMD Type MOSFETP-Channel MOSFETAO3413 (KO3413)SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.1 Features3 VDS (V) =-20V ID =-3 A (VGS =-4.5V) RDS(ON) 80m (VGS =-4.5V)1 2+0.10.95-0.1 0.1+0.05-0.01 RDS(ON) 100m (VGS =-2.5V)+0.11.9-0.1 RDS(ON) 130m (VGS =-1.8V)1. GateDD2. Source3. DrainGGSS Absolute Maxim
ao3413.pdf
AO3413P-Channel Enhancement Mode MOSFETFeatureDS(ON) GS -20V/-3A, R = 120m(MAX) @V = -4.5V.DS(ON) GS R = 150m(MAX) @V = -2.5V. DS(ON) Super High dense cell design for extremely low R3 Reliable and Rugged SC-59 for Surface Mount PackageSC-59 1 2 Applications1 Gate 2 Source 3 Drain Power Management Portable Equipment and Battery Powered Sy
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