AO3413A - аналоги, параметры транзистора - Справочник транзисторов

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R UMW UMW AO3413A 20V P-Channel MOSFET SOT 23 General Description General Description The AO3413 uses advanced trench technology to The AO3413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This operation with gate voltages as low as 1.8V. This device

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AO3413 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3413/L uses advanced trench technology to VDS (V) = -20V provide excellent RDS(ON), low gate charge and ID = -3 A (VGS = -4.5V) operation with gate voltages as low as 1.8V. This RDS(ON)

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AO3413 20V P-Channel MOSFET General Description Features General Description Features The AO3413 uses advanced trench technology to VDS = -20V The AO3413 uses advanced trench technology to VDS = -20V provide excellent RDS(ON), low gate charge and ID = -3A (VGS = -4.5V) provide excellent RDS(ON), low gate charge and ID = -3A (VGS = -4.5V) operation with gate voltages as low as 1.8V. This

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SMD Type MOSFET P-Channel MOSFET AO3413 (KO3413) SOT-23-3 Unit mm +0.2 2.9-0.1 +0.1 0.4 -0.1 3 Features VDS (V) =-20V ID =-3 A (VGS =-4.5V) 1 2 RDS(ON) 80m (VGS =-4.5V) +0.02 +0.1 0.15 -0.02 0.95 -0.1 RDS(ON) 100m (VGS =-2.5V) +0.1 1.9-0.2 RDS(ON) 130m (VGS =-1.8V) 1. Gate 2. Source D D 3. Drain G G S S Absolute