AO3413A MOSFET. Datasheet pdf. Equivalent
Type Designator: AO3413A
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 1.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 8.5 nC
trⓘ - Rise Time: 36 nS
Cossⓘ - Output Capacitance: 80 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
Package: SOT23
AO3413A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AO3413A Datasheet (PDF)
ao3413a.pdf
RUMWUMW AO3413A20V P-Channel MOSFETSOT23 General DescriptionGeneral DescriptionThe AO3413 uses advanced trench technology toThe AO3413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and provide excellent RDS(ON), low gate charge andoperation with gate voltages as low as 1.8V. Thisoperation with gate voltages as low as 1.8V. This device
ao3413l.pdf
AO3413P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO3413/L uses advanced trench technology to VDS (V) = -20Vprovide excellent RDS(ON), low gate charge andID = -3 A (VGS = -4.5V)operation with gate voltages as low as 1.8V. ThisRDS(ON)
ao3413.pdf
AO341320V P-Channel MOSFETGeneral Description FeaturesGeneral Description FeaturesThe AO3413 uses advanced trench technology to VDS = -20VThe AO3413 uses advanced trench technology to VDS = -20Vprovide excellent RDS(ON), low gate charge and ID = -3A (VGS = -4.5V)provide excellent RDS(ON), low gate charge and ID = -3A (VGS = -4.5V)operation with gate voltages as low as 1.8V. This
ao3413-3.pdf
SMD Type MOSFETP-Channel MOSFETAO3413 (KO3413)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.13 Features VDS (V) =-20V ID =-3 A (VGS =-4.5V)1 2 RDS(ON) 80m (VGS =-4.5V)+0.02+0.10.15 -0.020.95 -0.1 RDS(ON) 100m (VGS =-2.5V) +0.11.9-0.2 RDS(ON) 130m (VGS =-1.8V)1. Gate2. SourceDD3. DrainGGSS Absolute
ao3413.pdf
SMD Type MOSFETP-Channel MOSFETAO3413 (KO3413)SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.1 Features3 VDS (V) =-20V ID =-3 A (VGS =-4.5V) RDS(ON) 80m (VGS =-4.5V)1 2+0.10.95-0.1 0.1+0.05-0.01 RDS(ON) 100m (VGS =-2.5V)+0.11.9-0.1 RDS(ON) 130m (VGS =-1.8V)1. GateDD2. Source3. DrainGGSS Absolute Maxim
ao3413.pdf
AO3413P-Channel Enhancement Mode MOSFETFeatureDS(ON) GS -20V/-3A, R = 120m(MAX) @V = -4.5V.DS(ON) GS R = 150m(MAX) @V = -2.5V. DS(ON) Super High dense cell design for extremely low R3 Reliable and Rugged SC-59 for Surface Mount PackageSC-59 1 2 Applications1 Gate 2 Source 3 Drain Power Management Portable Equipment and Battery Powered Sy
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