AO3416A Todos los transistores

 

AO3416A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AO3416A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.4 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 6.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 328 nS
   Cossⓘ - Capacitancia de salida: 160 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.022 Ohm
   Paquete / Cubierta: SOT23
     - Selección de transistores por parámetros

 

AO3416A Datasheet (PDF)

 ..1. Size:2685K  umw-ic
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AO3416A

RUMWUMW AO3416AUMW AO3416AN-Channel MOSFET FeaturesSOT23 VDS (V) = 20V ID = 6.5 A (VGS = 4.5V) RDS(ON) 22m (VGS = 4.5V) RDS(ON) 26m (VGS = 2.5V) RDS(ON) 34m (VGS = 1.8V)1. GATE MARKING 2. SOURCE DD 3. DRAIN AR6E GGSS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 20

 8.1. Size:411K  aosemi
ao3416.pdf pdf_icon

AO3416A

AO341620V N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AO3416 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate ID (at VGS=4.5V) 6.5Avoltages as low as 1.8V. This device is suitable for use as RDS(ON) (at VGS=4.5V)

 8.2. Size:522K  shenzhen
ao3416.pdf pdf_icon

AO3416A

Shenzhen Tuofeng Semiconductor Technology Co., LtdAO3416N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO3416 uses advanced trench technology to VDS (V) = 20Vprovide excellent RDS(ON), low gate charge and ID = 6.0 Aoperation with gate voltages as low as 1.8V. This RDS(ON)

 8.3. Size:2330K  kexin
ao3416.pdf pdf_icon

AO3416A

SMD Type MOSFETN-Channel Enhancement MOSFETAO3416 (KO3416)SOT-23-3Unit: mm+0.2 Features 2.9 -0.1+0.10.4-0.1 VDS (V) = 20V3 ID = 6.5 A (VGS = 4.5V) RDS(ON) 22m (VGS = 4.5V) RDS(ON) 26m (VGS = 2.5V)1 2D D+0.02+0.1 RDS(ON) 34m (VGS = 1.8V) 0.15 -0.020.95 -0.1+0.11.9 -0.2GG1. Gate2. SourceSS3. Drain

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History: CEM9936A | BSP322P | LSH65R1K5HT

 

 
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