AO3416A Todos los transistores

 

AO3416A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AO3416A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.4 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 6.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 328 nS

Cossⓘ - Capacitancia de salida: 160 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.022 Ohm

Encapsulados: SOT23

 Búsqueda de reemplazo de AO3416A MOSFET

- Selecciónⓘ de transistores por parámetros

 

AO3416A datasheet

 ..1. Size:2685K  umw-ic
ao3416a.pdf pdf_icon

AO3416A

R UMW UMW AO3416A UMW AO3416A N-Channel MOSFET Features SOT 23 VDS (V) = 20V ID = 6.5 A (VGS = 4.5V) RDS(ON) 22m (VGS = 4.5V) RDS(ON) 26m (VGS = 2.5V) RDS(ON) 34m (VGS = 1.8V) 1. GATE MARKING 2. SOURCE D D 3. DRAIN AR6E G G S S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 20

 8.1. Size:411K  aosemi
ao3416.pdf pdf_icon

AO3416A

AO3416 20V N-Channel MOSFET General Description Product Summary VDS 20V The AO3416 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate ID (at VGS=4.5V) 6.5A voltages as low as 1.8V. This device is suitable for use as RDS(ON) (at VGS=4.5V)

 8.2. Size:522K  shenzhen
ao3416.pdf pdf_icon

AO3416A

Shenzhen Tuofeng Semiconductor Technology Co., Ltd AO3416 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3416 uses advanced trench technology to VDS (V) = 20V provide excellent RDS(ON), low gate charge and ID = 6.0 A operation with gate voltages as low as 1.8V. This RDS(ON)

 8.3. Size:2330K  kexin
ao3416.pdf pdf_icon

AO3416A

SMD Type MOSFET N-Channel Enhancement MOSFET AO3416 (KO3416) SOT-23-3 Unit mm +0.2 Features 2.9 -0.1 +0.1 0.4-0.1 VDS (V) = 20V 3 ID = 6.5 A (VGS = 4.5V) RDS(ON) 22m (VGS = 4.5V) RDS(ON) 26m (VGS = 2.5V) 1 2 D D +0.02 +0.1 RDS(ON) 34m (VGS = 1.8V) 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 G G 1. Gate 2. Source S S 3. Drain

Otros transistores... 100N03A , 30N03A , 35N06 , AO3402A , AO3403A , AO3409A , AO3413A , AO3414A , 7N65 , AO3422A , AO3423A , AO3442A , SI2301B , SI2302B , SI2304A , SI2305A , SI2306A .

History: SI2302B | VN0109N2 | 2SK2223-01 | SM4303PSUC | SWD5N65K | 2SK4171 | IRF8721TR

 

 

 

 

↑ Back to Top
.