AO3416A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AO3416A
Código: AR6E
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 1.4 W
Voltaje máximo drenador - fuente |Vds|: 20 V
Voltaje máximo fuente - puerta |Vgs|: 8 V
Corriente continua de drenaje |Id|: 6.5 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 1.1 V
Carga de la puerta (Qg): 10 nC
Tiempo de subida (tr): 328 nS
Conductancia de drenaje-sustrato (Cd): 160 pF
Resistencia entre drenaje y fuente RDS(on): 0.022 Ohm
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de MOSFET AO3416A
AO3416A Datasheet (PDF)
ao3416a.pdf
RUMWUMW AO3416AUMW AO3416AN-Channel MOSFET FeaturesSOT23 VDS (V) = 20V ID = 6.5 A (VGS = 4.5V) RDS(ON) 22m (VGS = 4.5V) RDS(ON) 26m (VGS = 2.5V) RDS(ON) 34m (VGS = 1.8V)1. GATE MARKING 2. SOURCE DD 3. DRAIN AR6E GGSS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 20
ao3416.pdf
AO341620V N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AO3416 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate ID (at VGS=4.5V) 6.5Avoltages as low as 1.8V. This device is suitable for use as RDS(ON) (at VGS=4.5V)
ao3416.pdf
Shenzhen Tuofeng Semiconductor Technology Co., LtdAO3416N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO3416 uses advanced trench technology to VDS (V) = 20Vprovide excellent RDS(ON), low gate charge and ID = 6.0 Aoperation with gate voltages as low as 1.8V. This RDS(ON)
ao3416.pdf
SMD Type MOSFETN-Channel Enhancement MOSFETAO3416 (KO3416)SOT-23-3Unit: mm+0.2 Features 2.9 -0.1+0.10.4-0.1 VDS (V) = 20V3 ID = 6.5 A (VGS = 4.5V) RDS(ON) 22m (VGS = 4.5V) RDS(ON) 26m (VGS = 2.5V)1 2D D+0.02+0.1 RDS(ON) 34m (VGS = 1.8V) 0.15 -0.020.95 -0.1+0.11.9 -0.2GG1. Gate2. SourceSS3. Drain
ao3416 ko3416.pdf
SMD Type MOSFETN-Channel Enhancement MOSFETAO3416 (KO3416) Features VDS (V) = 20V3 ID = 6.5 A (VGS = 4.5V) RDS(ON) 22m (VGS = 4.5V) RDS(ON) 26m (VGS = 2.5V)12D D RDS(ON) 34m (VGS = 1.8V) GG SS Absolute Maximum Ratings Ta
ao3416.pdf
AO3416N-Channel Enhancement Mode Power MOSFET Description The AO3416 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features Schematic diagram VDS = 20V,ID =6A RDS(ON)
ao3416.pdf
AO3416N-Channel Enhancement Mode MOSFET Feature 16V/6A, RDS(ON) = 50m(MAX) @VGS = 4.5V. RDS(ON) = 55m(MAX) @VGS= 2.5V. Super High dense cell design for extremely low RDS(ON) . Reliable and Rugged . SC-59 for Surface Mount Package . Applications LI-ION Protection Circuit Absolute Maximum Ratings TA=25 Unless Otherwise noted Electrical Characteris
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