AO3416A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AO3416A
   Código: AR6E
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.4 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 6.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.1 V
   Qgⓘ - Carga de la puerta: 10 nC
   trⓘ - Tiempo de subida: 328 nS
   Cossⓘ - Capacitancia de salida: 160 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.022 Ohm
   Paquete / Cubierta: SOT23

Búsqueda de reemplazo de MOSFET AO3416A

AO3416A Datasheet (PDF)

..1. Size:2685K umw-ic
ao3416a.pdf

RUMWUMW AO3416AUMW AO3416AN-Channel MOSFET FeaturesSOT23 VDS (V) = 20V ID = 6.5 A (VGS = 4.5V) RDS(ON) 22m (VGS = 4.5V) RDS(ON) 26m (VGS = 2.5V) RDS(ON) 34m (VGS = 1.8V)1. GATE MARKING 2. SOURCE DD 3. DRAIN AR6E GGSS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 20

8.1. Size:411K aosemi
ao3416.pdf

AO341620V N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AO3416 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate ID (at VGS=4.5V) 6.5Avoltages as low as 1.8V. This device is suitable for use as RDS(ON) (at VGS=4.5V)

8.2. Size:522K shenzhen
ao3416.pdf

Shenzhen Tuofeng Semiconductor Technology Co., LtdAO3416N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO3416 uses advanced trench technology to VDS (V) = 20Vprovide excellent RDS(ON), low gate charge and ID = 6.0 Aoperation with gate voltages as low as 1.8V. This RDS(ON)

8.3. Size:2330K kexin
ao3416.pdf

SMD Type MOSFETN-Channel Enhancement MOSFETAO3416 (KO3416)SOT-23-3Unit: mm+0.2 Features 2.9 -0.1+0.10.4-0.1 VDS (V) = 20V3 ID = 6.5 A (VGS = 4.5V) RDS(ON) 22m (VGS = 4.5V) RDS(ON) 26m (VGS = 2.5V)1 2D D+0.02+0.1 RDS(ON) 34m (VGS = 1.8V) 0.15 -0.020.95 -0.1+0.11.9 -0.2GG1. Gate2. SourceSS3. Drain

8.4. Size:234K kexin
ao3416 ko3416.pdf

SMD Type MOSFETN-Channel Enhancement MOSFETAO3416 (KO3416) Features VDS (V) = 20V3 ID = 6.5 A (VGS = 4.5V) RDS(ON) 22m (VGS = 4.5V) RDS(ON) 26m (VGS = 2.5V)12D D RDS(ON) 34m (VGS = 1.8V) GG SS Absolute Maximum Ratings Ta

8.5. Size:204K cn puolop
ao3416.pdf

AO3416N-Channel Enhancement Mode Power MOSFET Description The AO3416 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features Schematic diagram VDS = 20V,ID =6A RDS(ON)

8.6. Size:389K cn shikues
ao3416.pdf

AO3416N-Channel Enhancement Mode MOSFET Feature 16V/6A, RDS(ON) = 50m(MAX) @VGS = 4.5V. RDS(ON) = 55m(MAX) @VGS= 2.5V. Super High dense cell design for extremely low RDS(ON) . Reliable and Rugged . SC-59 for Surface Mount Package . Applications LI-ION Protection Circuit Absolute Maximum Ratings TA=25 Unless Otherwise noted Electrical Characteris

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

Liste

Recientemente añadidas las descripciónes de los transistores: