AO3416A
MOSFET. Datasheet pdf. Equivalent
Type Designator: AO3416A
Marking Code: AR6E
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.4
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.1
V
|Id|ⓘ - Maximum Drain Current: 6.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 10
nC
trⓘ - Rise Time: 328
nS
Cossⓘ -
Output Capacitance: 160
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.022
Ohm
Package:
SOT23
AO3416A
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AO3416A
Datasheet (PDF)
..1. Size:2685K umw-ic
ao3416a.pdf 
RUMWUMW AO3416AUMW AO3416AN-Channel MOSFET FeaturesSOT23 VDS (V) = 20V ID = 6.5 A (VGS = 4.5V) RDS(ON) 22m (VGS = 4.5V) RDS(ON) 26m (VGS = 2.5V) RDS(ON) 34m (VGS = 1.8V)1. GATE MARKING 2. SOURCE DD 3. DRAIN AR6E GGSS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 20
8.1. Size:411K aosemi
ao3416.pdf
AO341620V N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AO3416 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate ID (at VGS=4.5V) 6.5Avoltages as low as 1.8V. This device is suitable for use as RDS(ON) (at VGS=4.5V)
8.2. Size:522K shenzhen
ao3416.pdf
Shenzhen Tuofeng Semiconductor Technology Co., LtdAO3416N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO3416 uses advanced trench technology to VDS (V) = 20Vprovide excellent RDS(ON), low gate charge and ID = 6.0 Aoperation with gate voltages as low as 1.8V. This RDS(ON)
8.3. Size:2330K kexin
ao3416.pdf
SMD Type MOSFETN-Channel Enhancement MOSFETAO3416 (KO3416)SOT-23-3Unit: mm+0.2 Features 2.9 -0.1+0.10.4-0.1 VDS (V) = 20V3 ID = 6.5 A (VGS = 4.5V) RDS(ON) 22m (VGS = 4.5V) RDS(ON) 26m (VGS = 2.5V)1 2D D+0.02+0.1 RDS(ON) 34m (VGS = 1.8V) 0.15 -0.020.95 -0.1+0.11.9 -0.2GG1. Gate2. SourceSS3. Drain
8.4. Size:234K kexin
ao3416 ko3416.pdf
SMD Type MOSFETN-Channel Enhancement MOSFETAO3416 (KO3416) Features VDS (V) = 20V3 ID = 6.5 A (VGS = 4.5V) RDS(ON) 22m (VGS = 4.5V) RDS(ON) 26m (VGS = 2.5V)12D D RDS(ON) 34m (VGS = 1.8V) GG SS Absolute Maximum Ratings Ta
8.5. Size:204K cn puolop
ao3416.pdf
AO3416N-Channel Enhancement Mode Power MOSFET Description The AO3416 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features Schematic diagram VDS = 20V,ID =6A RDS(ON)
8.6. Size:389K cn shikues
ao3416.pdf
AO3416N-Channel Enhancement Mode MOSFET Feature 16V/6A, RDS(ON) = 50m(MAX) @VGS = 4.5V. RDS(ON) = 55m(MAX) @VGS= 2.5V. Super High dense cell design for extremely low RDS(ON) . Reliable and Rugged . SC-59 for Surface Mount Package . Applications LI-ION Protection Circuit Absolute Maximum Ratings TA=25 Unless Otherwise noted Electrical Characteris
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