AO3422A Todos los transistores

R UMW AO3422A UMW UMW AO3422A N-Channel 60-V(D-S) MOSFET V(BR)DSS RDS(on)MAX ID 105m @10V 60 V 2.1A 125m @4.5V FEATURE TrenchFET Power MOSFET SOT 23 APPLICATION Load Switch for Portable Devices t DC/DC Conver er MARKING Equivalent Circuit 1. GATE 2. SOURCE 3. DRAIN Maximum ratings ( Ta=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Sou

AO3422 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3422 uses advanced trench technology to VDS (V) = 55V provide excellent RDS(ON) and low gate charge. It offers ID = 2.1A (VGS = 4.5V) operation over a wide gate drive range from 2.5V to RDS(ON)

Shenzhen Tuofeng Semiconductor Technology Co., Ltd AO3422 AO3422 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3422 uses advanced trench technology to VDS (V) = 55V provide excellent RDS(ON) and low gate charge. It ID = 2.1A (VGS = 4.5V) offers operation over a wide gate drive range from RDS(ON)

SMD Type MOSFET N-Channel MOSFET AO3422 (KO3422) SOT-23-3 Unit mm +0.2 2.9-0.1 +0.1 0.4 -0.1 Features 3 VDS (V) = 55V ID = 2.1 A (VGS = 4.5V) RDS(ON) 160m (VGS = 4.5V) 1 2 +0.02 +0.1 0.15 -0.02 0.95 -0.1 RDS(ON) 200m (VGS = 2.5V) +0.1 1.9 -0.2 D 1. Gate 2. Source 3. Drain G S Absolute Maximum Ratings Ta = 25 Parameter Symb

SMD Type MOSFET N-Channel MOSFET AO3422 (KO3422) SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 Features 3 VDS (V) = 55V ID = 2.1 A (VGS = 4.5V) RDS(ON) 160m (VGS = 4.5V) 1 2 +0.05 0.95+0.1 -0.1 0.1 -0.01 RDS(ON) 200m (VGS = 2.5V) 1.9+0.1 -0.1 D 1. Gate 2. Source 3. Drain G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rat

AO3422 www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available TrenchFET Power MOSFET 0.085 at VGS = 10 V 4.0 60 2.1 nC 100 % Rg Tested 0.096 at VGS = 4.5 V 3.8 100 % UIS Tested APPLICATIONS Battery Switch DC/DC Converter D TO-236 (SOT23) G 1