AO3422A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

RUMW AO3422AUMW UMW AO3422AN-Channel 60-V(D-S) MOSFETV(BR)DSS RDS(on)MAX ID105m@10V60 V 2.1A125m@4.5VFEATURE TrenchFET Power MOSFETSOT23 APPLICATION Load Switch for Portable Devicest DC/DC Conver erMARKING Equivalent Circuit1. GATE 2. SOURCE 3. DRAIN Maximum ratings ( Ta=25 unless otherwise noted)Parameter Symbol Value Unit Drain-Sou

AO3422N-Channel Enhancement Mode Field Effect TransistorGeneral DescriptionFeaturesThe AO3422 uses advanced trench technology to VDS (V) = 55Vprovide excellent RDS(ON) and low gate charge. It offers ID = 2.1A (VGS = 4.5V)operation over a wide gate drive range from 2.5V to RDS(ON)

Shenzhen Tuofeng Semiconductor Technology Co., Ltd AO3422AO3422N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO3422 uses advanced trench technology to VDS (V) = 55Vprovide excellent RDS(ON) and low gate charge. It ID = 2.1A (VGS = 4.5V)offers operation over a wide gate drive range from RDS(ON)

SMD Type MOSFETN-Channel MOSFETAO3422 (KO3422)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.1 Features 3 VDS (V) = 55V ID = 2.1 A (VGS = 4.5V) RDS(ON) 160m (VGS = 4.5V) 1 2+0.02+0.10.15 -0.020.95 -0.1 RDS(ON) 200m (VGS = 2.5V)+0.11.9 -0.2D 1. Gate2. Source3. DrainG S Absolute Maximum Ratings Ta = 25Parameter Symb

SMD Type MOSFETN-Channel MOSFETAO3422 (KO3422)SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.1 Features 3 VDS (V) = 55V ID = 2.1 A (VGS = 4.5V) RDS(ON) 160m (VGS = 4.5V) 1 2+0.050.95+0.1-0.1 0.1 -0.01 RDS(ON) 200m (VGS = 2.5V)1.9+0.1-0.1D 1. Gate2. Source3. DrainG S Absolute Maximum Ratings Ta = 25Parameter Symbol Rat

AO3422www.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available TrenchFET Power MOSFET0.085 at VGS = 10 V 4.060 2.1 nC 100 % Rg Tested0.096 at VGS = 4.5 V 3.8 100 % UIS TestedAPPLICATIONS Battery Switch DC/DC ConverterDTO-236(SOT23)G 1