AO3422A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AO3422A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 2.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 2.4 nS
   Cossⓘ - Capacitancia de salida: 31 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.105 Ohm
   Paquete / Cubierta: SOT23

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AO3422A Datasheet (PDF)

..1. Size:282K umw-ic
ao3422a.pdf

RUMW AO3422AUMW UMW AO3422AN-Channel 60-V(D-S) MOSFETV(BR)DSS RDS(on)MAX ID105m@10V60 V 2.1A125m@4.5VFEATURE TrenchFET Power MOSFETSOT23 APPLICATION Load Switch for Portable Devicest DC/DC Conver erMARKING Equivalent Circuit1. GATE 2. SOURCE 3. DRAIN Maximum ratings ( Ta=25 unless otherwise noted)Parameter Symbol Value Unit Drain-Sou

8.1. Size:177K aosemi
ao3422.pdf

AO3422N-Channel Enhancement Mode Field Effect TransistorGeneral DescriptionFeaturesThe AO3422 uses advanced trench technology to VDS (V) = 55Vprovide excellent RDS(ON) and low gate charge. It offers ID = 2.1A (VGS = 4.5V)operation over a wide gate drive range from 2.5V to RDS(ON)

8.2. Size:256K shenzhen
ao3422.pdf

Shenzhen Tuofeng Semiconductor Technology Co., Ltd AO3422AO3422N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO3422 uses advanced trench technology to VDS (V) = 55Vprovide excellent RDS(ON) and low gate charge. It ID = 2.1A (VGS = 4.5V)offers operation over a wide gate drive range from RDS(ON)

8.3. Size:1076K kexin
ao3422-3.pdf

SMD Type MOSFETN-Channel MOSFETAO3422 (KO3422)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.1 Features 3 VDS (V) = 55V ID = 2.1 A (VGS = 4.5V) RDS(ON) 160m (VGS = 4.5V) 1 2+0.02+0.10.15 -0.020.95 -0.1 RDS(ON) 200m (VGS = 2.5V)+0.11.9 -0.2D 1. Gate2. Source3. DrainG S Absolute Maximum Ratings Ta = 25Parameter Symb

8.4. Size:963K kexin
ao3422.pdf

SMD Type MOSFETN-Channel MOSFETAO3422 (KO3422)SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.1 Features 3 VDS (V) = 55V ID = 2.1 A (VGS = 4.5V) RDS(ON) 160m (VGS = 4.5V) 1 2+0.050.95+0.1-0.1 0.1 -0.01 RDS(ON) 200m (VGS = 2.5V)1.9+0.1-0.1D 1. Gate2. Source3. DrainG S Absolute Maximum Ratings Ta = 25Parameter Symbol Rat

8.5. Size:864K cn vbsemi
ao3422.pdf

AO3422www.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available TrenchFET Power MOSFET0.085 at VGS = 10 V 4.060 2.1 nC 100 % Rg Tested0.096 at VGS = 4.5 V 3.8 100 % UIS TestedAPPLICATIONS Battery Switch DC/DC ConverterDTO-236(SOT23)G 1

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: FDD2582 | FTA02N60C

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