AO3422A
MOSFET. Datasheet pdf. Equivalent
Type Designator: AO3422A
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.25
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 2.1
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 2.6
nC
trⓘ - Rise Time: 2.4
nS
Cossⓘ -
Output Capacitance: 31
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.105
Ohm
Package:
SOT23
AO3422A
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AO3422A
Datasheet (PDF)
..1. Size:282K umw-ic
ao3422a.pdf 
RUMW AO3422AUMW UMW AO3422AN-Channel 60-V(D-S) MOSFETV(BR)DSS RDS(on)MAX ID105m@10V60 V 2.1A125m@4.5VFEATURE TrenchFET Power MOSFETSOT23 APPLICATION Load Switch for Portable Devicest DC/DC Conver erMARKING Equivalent Circuit1. GATE 2. SOURCE 3. DRAIN Maximum ratings ( Ta=25 unless otherwise noted)Parameter Symbol Value Unit Drain-Sou
8.1. Size:177K aosemi
ao3422.pdf
AO3422N-Channel Enhancement Mode Field Effect TransistorGeneral DescriptionFeaturesThe AO3422 uses advanced trench technology to VDS (V) = 55Vprovide excellent RDS(ON) and low gate charge. It offers ID = 2.1A (VGS = 4.5V)operation over a wide gate drive range from 2.5V to RDS(ON)
8.2. Size:256K shenzhen
ao3422.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd AO3422AO3422N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO3422 uses advanced trench technology to VDS (V) = 55Vprovide excellent RDS(ON) and low gate charge. It ID = 2.1A (VGS = 4.5V)offers operation over a wide gate drive range from RDS(ON)
8.3. Size:1076K kexin
ao3422-3.pdf
SMD Type MOSFETN-Channel MOSFETAO3422 (KO3422)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.1 Features 3 VDS (V) = 55V ID = 2.1 A (VGS = 4.5V) RDS(ON) 160m (VGS = 4.5V) 1 2+0.02+0.10.15 -0.020.95 -0.1 RDS(ON) 200m (VGS = 2.5V)+0.11.9 -0.2D 1. Gate2. Source3. DrainG S Absolute Maximum Ratings Ta = 25Parameter Symb
8.4. Size:963K kexin
ao3422.pdf
SMD Type MOSFETN-Channel MOSFETAO3422 (KO3422)SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.1 Features 3 VDS (V) = 55V ID = 2.1 A (VGS = 4.5V) RDS(ON) 160m (VGS = 4.5V) 1 2+0.050.95+0.1-0.1 0.1 -0.01 RDS(ON) 200m (VGS = 2.5V)1.9+0.1-0.1D 1. Gate2. Source3. DrainG S Absolute Maximum Ratings Ta = 25Parameter Symbol Rat
8.5. Size:864K cn vbsemi
ao3422.pdf
AO3422www.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available TrenchFET Power MOSFET0.085 at VGS = 10 V 4.060 2.1 nC 100 % Rg Tested0.096 at VGS = 4.5 V 3.8 100 % UIS TestedAPPLICATIONS Battery Switch DC/DC ConverterDTO-236(SOT23)G 1
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