FDA28N50 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDA28N50  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 310 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 28 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.155 Ohm

Encapsulados: TO3PN

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FDA28N50 datasheet

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FDA28N50

August 2008 UniFETTM FDA28N50 N-Channel MOSFET 500V, 28A, 0.155 Features Description RDS(on) = 0.122 ( Typ.)@ VGS = 10V, ID = 14A These N-Channel enhancement mode power field effect transistors are produced using Failchild s proprietary, planar Low gate charge ( Typ. 80nC) stripe, DMOS technology. Low Crss ( Typ. 42pF) This advance technology has been especially

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FDA28N50

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and oth

 ..3. Size:209K  inchange semiconductor
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FDA28N50

INCHANGE Semiconductor isc N-Channel MOSFET Transistor FDA28N50 FEATURES With TO-3PN packaging High speed switching Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE

 0.1. Size:535K  fairchild semi
 fda28n50f.pdf pdf_icon

FDA28N50

November 2008 UniFETTM FDA28N50F N-Channel MOSFET 500V, 28A, 0.175 Features Description RDS(on) = 0.140 ( Typ.)@ VGS = 10V, ID = 14A These N-Channel enhancement mode power field effect transistors are produced using Failchild s proprietary, planar Low Gate Charge ( Typ. 80nC) stripe, DMOS technology. Low Crss ( Typ. 38pF) This advance technology has been especi

MOSTRAR MÁS

Otros transistores... FDA16N50F109, FDA18N50, FDA20N50F109, FDA20N50F, FDA24N40F, STU402D, FDA24N50, FDA24N50F, IRFB3206, FDA28N50F, FDA33N25, FDA38N30, FDA50N50, FDA59N25, FDA59N30, FDA69N25, FDA70N20