FDA28N50 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDA28N50
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 310 W
Voltaje máximo drenador - fuente |Vds|: 500 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 28 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 5 V
Carga de la puerta (Qg): 80 nC
Resistencia entre drenaje y fuente RDS(on): 0.155 Ohm
Paquete / Cubierta: TO3PN
Búsqueda de reemplazo de MOSFET FDA28N50
FDA28N50 Datasheet (PDF)
fda28n50.pdf
August 2008UniFETTMFDA28N50N-Channel MOSFET 500V, 28A, 0.155Features Description RDS(on) = 0.122 ( Typ.)@ VGS = 10V, ID = 14A These N-Channel enhancement mode power field effect transistors are produced using Failchilds proprietary, planar Low gate charge ( Typ. 80nC)stripe, DMOS technology. Low Crss ( Typ. 42pF)This advance technology has been especially
fda28n50.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and oth
fda28n50.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor FDA28N50FEATURESWith TO-3PN packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE
fda28n50f.pdf
November 2008UniFETTMFDA28N50FN-Channel MOSFET 500V, 28A, 0.175Features Description RDS(on) = 0.140 ( Typ.)@ VGS = 10V, ID = 14A These N-Channel enhancement mode power field effect transistors are produced using Failchilds proprietary, planar Low Gate Charge ( Typ. 80nC)stripe, DMOS technology. Low Crss ( Typ. 38pF)This advance technology has been especi
fda28n50f.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
