All MOSFET. FDA28N50 Datasheet

 

FDA28N50 MOSFET. Datasheet pdf. Equivalent


   Type Designator: FDA28N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 310 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 28 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 80 nC
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.155 Ohm
   Package: TO3PN

 FDA28N50 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDA28N50 Datasheet (PDF)

 ..1. Size:693K  fairchild semi
fda28n50.pdf

FDA28N50 FDA28N50

August 2008UniFETTMFDA28N50N-Channel MOSFET 500V, 28A, 0.155Features Description RDS(on) = 0.122 ( Typ.)@ VGS = 10V, ID = 14A These N-Channel enhancement mode power field effect transistors are produced using Failchilds proprietary, planar Low gate charge ( Typ. 80nC)stripe, DMOS technology. Low Crss ( Typ. 42pF)This advance technology has been especially

 ..2. Size:1507K  onsemi
fda28n50.pdf

FDA28N50 FDA28N50

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and oth

 ..3. Size:209K  inchange semiconductor
fda28n50.pdf

FDA28N50 FDA28N50

INCHANGE Semiconductorisc N-Channel MOSFET Transistor FDA28N50FEATURESWith TO-3PN packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE

 0.1. Size:535K  fairchild semi
fda28n50f.pdf

FDA28N50 FDA28N50

November 2008UniFETTMFDA28N50FN-Channel MOSFET 500V, 28A, 0.175Features Description RDS(on) = 0.140 ( Typ.)@ VGS = 10V, ID = 14A These N-Channel enhancement mode power field effect transistors are produced using Failchilds proprietary, planar Low Gate Charge ( Typ. 80nC)stripe, DMOS technology. Low Crss ( Typ. 38pF)This advance technology has been especi

 0.2. Size:1523K  onsemi
fda28n50f.pdf

FDA28N50 FDA28N50

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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