All MOSFET. FDA28N50 Datasheet

 

FDA28N50 MOSFET. Datasheet pdf. Equivalent

Type Designator: FDA28N50

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 310 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 28 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 80 nC

Maximum Drain-Source On-State Resistance (Rds): 0.155 Ohm

Package: TO3PN

FDA28N50 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDA28N50 Datasheet (PDF)

1.1. fda28n50.pdf Size:693K _fairchild_semi

FDA28N50
FDA28N50

August 2008 UniFETTM FDA28N50 N-Channel MOSFET 500V, 28A, 0.155? Features Description RDS(on) = 0.122? ( Typ.)@ VGS = 10V, ID = 14A These N-Channel enhancement mode power field effect transistors are produced using Failchilds proprietary, planar Low gate charge ( Typ. 80nC) stripe, DMOS technology. Low Crss ( Typ. 42pF) This advance technology has been especially tailored to

1.2. fda28n50f.pdf Size:535K _fairchild_semi

FDA28N50
FDA28N50

November 2008 UniFETTM FDA28N50F N-Channel MOSFET 500V, 28A, 0.175? Features Description RDS(on) = 0.140? ( Typ.)@ VGS = 10V, ID = 14A These N-Channel enhancement mode power field effect transistors are produced using Failchilds proprietary, planar Low Gate Charge ( Typ. 80nC) stripe, DMOS technology. Low Crss ( Typ. 38pF) This advance technology has been especially tailored t

 

Datasheet: FDA16N50_F109 , FDA18N50 , FDA20N50_F109 , FDA20N50F , FDA24N40F , STU402D , FDA24N50 , FDA24N50F , IRF630A , FDA28N50F , FDA33N25 , FDA38N30 , FDA50N50 , FDA59N25 , FDA59N30 , FDA69N25 , FDA70N20 .

 

 
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