FDA28N50 datasheet, аналоги, основные параметры

Наименование производителя: FDA28N50  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 310 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 500 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 28 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.155 Ohm

Тип корпуса: TO3PN

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Аналог (замена) для FDA28N50

- подборⓘ MOSFET транзистора по параметрам

 

FDA28N50 даташит

 ..1. Size:693K  fairchild semi
 fda28n50.pdf pdf_icon

FDA28N50

August 2008 UniFETTM FDA28N50 N-Channel MOSFET 500V, 28A, 0.155 Features Description RDS(on) = 0.122 ( Typ.)@ VGS = 10V, ID = 14A These N-Channel enhancement mode power field effect transistors are produced using Failchild s proprietary, planar Low gate charge ( Typ. 80nC) stripe, DMOS technology. Low Crss ( Typ. 42pF) This advance technology has been especially

 ..2. Size:1507K  onsemi
 fda28n50.pdf pdf_icon

FDA28N50

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and oth

 ..3. Size:209K  inchange semiconductor
 fda28n50.pdf pdf_icon

FDA28N50

INCHANGE Semiconductor isc N-Channel MOSFET Transistor FDA28N50 FEATURES With TO-3PN packaging High speed switching Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE

 0.1. Size:535K  fairchild semi
 fda28n50f.pdf pdf_icon

FDA28N50

November 2008 UniFETTM FDA28N50F N-Channel MOSFET 500V, 28A, 0.175 Features Description RDS(on) = 0.140 ( Typ.)@ VGS = 10V, ID = 14A These N-Channel enhancement mode power field effect transistors are produced using Failchild s proprietary, planar Low Gate Charge ( Typ. 80nC) stripe, DMOS technology. Low Crss ( Typ. 38pF) This advance technology has been especi

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