FDA28N50 - Даташиты. Аналоги. Основные параметры

August 2008 UniFETTM FDA28N50 N-Channel MOSFET 500V, 28A, 0.155 Features Description RDS(on) = 0.122 ( Typ.)@ VGS = 10V, ID = 14A These N-Channel enhancement mode power field effect transistors are produced using Failchild s proprietary, planar Low gate charge ( Typ. 80nC) stripe, DMOS technology. Low Crss ( Typ. 42pF) This advance technology has been especially

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and oth

INCHANGE Semiconductor isc N-Channel MOSFET Transistor FDA28N50 FEATURES With TO-3PN packaging High speed switching Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE

November 2008 UniFETTM FDA28N50F N-Channel MOSFET 500V, 28A, 0.175 Features Description RDS(on) = 0.140 ( Typ.)@ VGS = 10V, ID = 14A These N-Channel enhancement mode power field effect transistors are produced using Failchild s proprietary, planar Low Gate Charge ( Typ. 80nC) stripe, DMOS technology. Low Crss ( Typ. 38pF) This advance technology has been especi

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur