FDA28N50 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: FDA28N50
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 310 W
Предельно допустимое напряжение сток-исток |Uds|: 500 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 5 V
Максимально допустимый постоянный ток стока |Id|: 28 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 80 nC
Сопротивление сток-исток открытого транзистора (Rds): 0.155 Ohm
Тип корпуса: TO3PN
FDA28N50 Datasheet (PDF)
fda28n50.pdf
August 2008UniFETTMFDA28N50N-Channel MOSFET 500V, 28A, 0.155Features Description RDS(on) = 0.122 ( Typ.)@ VGS = 10V, ID = 14A These N-Channel enhancement mode power field effect transistors are produced using Failchilds proprietary, planar Low gate charge ( Typ. 80nC)stripe, DMOS technology. Low Crss ( Typ. 42pF)This advance technology has been especially
fda28n50.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and oth
fda28n50.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor FDA28N50FEATURESWith TO-3PN packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE
fda28n50f.pdf
November 2008UniFETTMFDA28N50FN-Channel MOSFET 500V, 28A, 0.175Features Description RDS(on) = 0.140 ( Typ.)@ VGS = 10V, ID = 14A These N-Channel enhancement mode power field effect transistors are produced using Failchilds proprietary, planar Low Gate Charge ( Typ. 80nC)stripe, DMOS technology. Low Crss ( Typ. 38pF)This advance technology has been especi
fda28n50f.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
