SI2307A Todos los transistores

R UMW UMW SI2307A UMW SI2307A P-Channel Enhancement MOSFET SOT 23 Features VDS (V) =-30V ID =-3.0A (VGS =-10V) RDS(ON) 80m (VGS =-10V) 1. GATE RDS(ON) 140m (VGS =-4.5V) 2. SOURCE 3. DRAIN Marking G 1 3 D A79T S 2 Absolute Maximum Ratings Ta = 25 Parameter Symbol 5 sec Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage V

New Product Si2307CDS Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ( ) ID (A)a, b Qg (Typ.) TrenchFET Power MOSFET 0.088 at VGS = - 10 V - 2.7 - 30 4.1 nC RoHS 0.138 at VGS = - 4.5 V - 2.2 COMPLIANT APPLICATIONS Load Switch for Portable Devices TO-236 (SOT-23) G 1 3 D S S 2 G Top Vi

New Product Si2307CDS Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ( ) ID (A)a, b Qg (Typ.) TrenchFET Power MOSFET 0.088 at VGS = - 10 V - 2.7 - 30 4.1 nC RoHS 0.138 at VGS = - 4.5 V - 2.2 COMPLIANT APPLICATIONS Load Switch for Portable Devices TO-236 (SOT-23) G 1 3 D S S 2 G Top Vi

Si2307DS Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.080 @ VGS = 10 V 3 30 30 0.140 @ VGS = 4.5 V 2 TO-236 (SOT-23) G 1 3 D S 2 Top View Si2307DS (A7)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLSS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V V Gate-Source Voltage VG

Si2307BDS Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ( ) ID (A)b TrenchFET Power MOSFET 0.078 at VGS = - 10 V - 3.2 - 30 RoHS 0.130 at VGS = - 4.5 V - 2.5 COMPLIANT TO-236 (SOT-23) G 1 3 D S 2 Top View Si2307BDS (L7)* * Marking Code Ordering Information Si2307BDS-T1-E3 (Lead (Pb)-fr

SI2307 Features TrenchFET Power MOSFET Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF" P-Channel MOSFET Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings Operating Junction Temperature Range -55 C to +150 C Sto

Shenzhen Tuofeng Semiconductor Technology Co., Ltd Si2307 P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.060 @ VGS = 10 V 4.1 30 30 0.090 @ VGS = 4.5 V 3.0 TO-236 (SOT-23) G 1 3 D S 2 Top View Si2307 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLSS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V V Gate-So

SMD Type MOSFET P-Channel Enhancement MOSFET SI2307DS (KI2307DS) SOT-23 Unit mm +0.1 2.9-0.1 +0.1 Features 0.4 -0.1 3 VDS (V) =-30V ID =-3.0A (VGS =-10V) RDS(ON) 80m (VGS =-10V) 1 2 RDS(ON) 140m (VGS =-4.5V) +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 G 1 1.Gate 3 D 2.Source S 2 3.Drain Absolute Maximum Ratings Ta = 25 Param

SMD Type MOSFET P-Channel Enhancement MOSFET SI2307BDS (KI2307BDS) Features SOT-23 Unit mm +0.1 2.9 -0.1 VDS (V) =-30V +0.1 0.4 -0.1 RDS(ON) 78m (VGS =-10V) 3 RDS(ON) 130m (VGS =-4.5V) 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 G 1 1.Gate 3 D 2.Source S 2 3.Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol 5 sec Stead

SMD Type MOSFET P-Channel Enhancement MOSFET SI2307BDS (KI2307BDS) SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4 -0.1 Features 3 VDS (V) =-30V RDS(ON) 78m (VGS =-10V) RDS(ON) 130m (VGS =-4.5V) 1 2 +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 G 1 3 D 1. Gate S 2 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol 5 sec