SI2307A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SI2307A
Маркировка: A79T
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 1.25 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 3 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 10 nC
trⓘ - Время нарастания: 9 ns
Cossⓘ - Выходная емкость: 126 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.08 Ohm
Тип корпуса: SOT23
SI2307A Datasheet (PDF)
si2307a.pdf
RUMWUMW SI2307AUMW SI2307AP-Channel Enhancement MOSFETSOT23 Features VDS (V) =-30V ID =-3.0A (VGS =-10V) RDS(ON) 80m (VGS =-10V)1. GATE RDS(ON) 140m (VGS =-4.5V) 2. SOURCE 3. DRAIN MarkingG 13 DA79TS 2 Absolute Maximum Ratings Ta = 25Parameter Symbol 5 sec UnitDrain-Source Voltage VDS -30VGate-Source Voltage V
si2307cd.pdf
New ProductSi2307CDSVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)a, b Qg (Typ.) TrenchFET Power MOSFET0.088 at VGS = - 10 V - 2.7- 30 4.1 nCRoHS0.138 at VGS = - 4.5 V - 2.2COMPLIANTAPPLICATIONS Load Switch for Portable DevicesTO-236(SOT-23)G 13 DSS 2GTop Vi
si2307cds.pdf
New ProductSi2307CDSVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)a, b Qg (Typ.) TrenchFET Power MOSFET0.088 at VGS = - 10 V - 2.7- 30 4.1 nCRoHS0.138 at VGS = - 4.5 V - 2.2COMPLIANTAPPLICATIONS Load Switch for Portable DevicesTO-236(SOT-23)G 13 DSS 2GTop Vi
si2307ds.pdf
Si2307DSVishay SiliconixP-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.080 @ VGS = 10 V 330300.140 @ VGS = 4.5 V 2TO-236(SOT-23)G 13 DS 2Top ViewSi2307DS (A7)**Marking CodeABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLSS OTHERWISE NOTED) Parameter Symbol Limit UnitDrain-Source Voltage VDS 30VVGate-Source Voltage VG
si2307bds.pdf
Si2307BDSVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)b TrenchFET Power MOSFET 0.078 at VGS = - 10 V - 3.2- 30 RoHS0.130 at VGS = - 4.5 V - 2.5COMPLIANTTO-236(SOT-23)G 13 DS 2Top ViewSi2307BDS (L7)** Marking CodeOrdering Information: Si2307BDS-T1-E3 (Lead (Pb)-fr
si2307.pdf
SI2307Features TrenchFET Power MOSFET Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF"P-Channel MOSFET Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)Maximum Ratings Operating Junction Temperature Range: -55C to +150C Sto
si2307.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd Si2307P-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.060 @ VGS = 10 V 4.130300.090 @ VGS = 4.5 V 3.0TO-236(SOT-23)G 13 DS 2Top ViewSi2307 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLSS OTHERWISE NOTED) Parameter Symbol Limit UnitDrain-Source Voltage VDS 30VVGate-So
si2307ds.pdf
SMD Type MOSFETP-Channel Enhancement MOSFET SI2307DS (KI2307DS)SOT-23Unit: mm+0.12.9-0.1+0.1 Features 0.4 -0.13 VDS (V) =-30V ID =-3.0A (VGS =-10V) RDS(ON) 80m (VGS =-10V)1 2 RDS(ON) 140m (VGS =-4.5V)+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.1G 11.Gate3 D2.SourceS 23.Drain Absolute Maximum Ratings Ta = 25Param
si2307ds-3.pdf
SMD Type MOSFETP-Channel Enhancement MOSFET SI2307DS (KI2307DS)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.1 Features3 VDS (V) =-30V ID =-3.0A (VGS =-10V) RDS(ON) 80m (VGS =-10V)1 2+0.02+0.1 RDS(ON) 140m (VGS =-4.5V)0.15 -0.020.95-0.1+0.11.9-0.2G 13 D1. GateS 22. Source3. Drain Absolute Maximum Ratings Ta = 25
si2307bds.pdf
SMD Type MOSFETP-Channel Enhancement MOSFET SI2307BDS (KI2307BDS) FeaturesSOT-23Unit: mm+0.12.9 -0.1 VDS (V) =-30V+0.10.4 -0.1 RDS(ON) 78m (VGS =-10V) 3 RDS(ON) 130m (VGS =-4.5V)1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1G 11.Gate3 D2.SourceS 23.Drain Absolute Maximum Ratings Ta = 25Parameter Symbol 5 sec Stead
si2307bds-3.pdf
SMD Type MOSFETP-Channel Enhancement MOSFET SI2307BDS (KI2307BDS)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.1 Features 3 VDS (V) =-30V RDS(ON) 78m (VGS =-10V) RDS(ON) 130m (VGS =-4.5V)1 2+0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.2G 13 D1. GateS 2 2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol 5 sec
si2307ds ki2307ds.pdf
SMD Type MOSFETP-Channel Enhancement MOSFET SI2307DS (KI2307DS)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.1 Features3 VDS (V) =-30V ID =-3.0A (VGS =-10V) RDS(ON) 80m (VGS =-10V)1 2+0.02+0.1 RDS(ON) 140m (VGS =-4.5V)0.15 -0.020.95-0.1+0.11.9-0.2G 13 D1. GateS 22. Source3. Drain Absolute Maximum Ratings Ta = 25
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918