SI2307A
MOSFET. Datasheet pdf. Equivalent
Type Designator: SI2307A
Marking Code: A79T
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.25
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 3
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 10
nC
trⓘ - Rise Time: 9
nS
Cossⓘ -
Output Capacitance: 126
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.08
Ohm
Package:
SOT23
SI2307A
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI2307A
Datasheet (PDF)
..1. Size:2072K umw-ic
si2307a.pdf 
RUMWUMW SI2307AUMW SI2307AP-Channel Enhancement MOSFETSOT23 Features VDS (V) =-30V ID =-3.0A (VGS =-10V) RDS(ON) 80m (VGS =-10V)1. GATE RDS(ON) 140m (VGS =-4.5V) 2. SOURCE 3. DRAIN MarkingG 13 DA79TS 2 Absolute Maximum Ratings Ta = 25Parameter Symbol 5 sec UnitDrain-Source Voltage VDS -30VGate-Source Voltage V
8.1. Size:201K vishay
si2307cd.pdf
New ProductSi2307CDSVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)a, b Qg (Typ.) TrenchFET Power MOSFET0.088 at VGS = - 10 V - 2.7- 30 4.1 nCRoHS0.138 at VGS = - 4.5 V - 2.2COMPLIANTAPPLICATIONS Load Switch for Portable DevicesTO-236(SOT-23)G 13 DSS 2GTop Vi
8.2. Size:204K vishay
si2307cds.pdf
New ProductSi2307CDSVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)a, b Qg (Typ.) TrenchFET Power MOSFET0.088 at VGS = - 10 V - 2.7- 30 4.1 nCRoHS0.138 at VGS = - 4.5 V - 2.2COMPLIANTAPPLICATIONS Load Switch for Portable DevicesTO-236(SOT-23)G 13 DSS 2GTop Vi
8.3. Size:76K vishay
si2307ds.pdf
Si2307DSVishay SiliconixP-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.080 @ VGS = 10 V 330300.140 @ VGS = 4.5 V 2TO-236(SOT-23)G 13 DS 2Top ViewSi2307DS (A7)**Marking CodeABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLSS OTHERWISE NOTED) Parameter Symbol Limit UnitDrain-Source Voltage VDS 30VVGate-Source Voltage VG
8.4. Size:185K vishay
si2307bds.pdf
Si2307BDSVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)b TrenchFET Power MOSFET 0.078 at VGS = - 10 V - 3.2- 30 RoHS0.130 at VGS = - 4.5 V - 2.5COMPLIANTTO-236(SOT-23)G 13 DS 2Top ViewSi2307BDS (L7)** Marking CodeOrdering Information: Si2307BDS-T1-E3 (Lead (Pb)-fr
8.5. Size:936K mcc
si2307.pdf
SI2307Features TrenchFET Power MOSFET Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF"P-Channel MOSFET Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)Maximum Ratings Operating Junction Temperature Range: -55C to +150C Sto
8.6. Size:593K shenzhen
si2307.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd Si2307P-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.060 @ VGS = 10 V 4.130300.090 @ VGS = 4.5 V 3.0TO-236(SOT-23)G 13 DS 2Top ViewSi2307 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLSS OTHERWISE NOTED) Parameter Symbol Limit UnitDrain-Source Voltage VDS 30VVGate-So
8.7. Size:1474K kexin
si2307ds.pdf
SMD Type MOSFETP-Channel Enhancement MOSFET SI2307DS (KI2307DS)SOT-23Unit: mm+0.12.9-0.1+0.1 Features 0.4 -0.13 VDS (V) =-30V ID =-3.0A (VGS =-10V) RDS(ON) 80m (VGS =-10V)1 2 RDS(ON) 140m (VGS =-4.5V)+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.1G 11.Gate3 D2.SourceS 23.Drain Absolute Maximum Ratings Ta = 25Param
8.8. Size:1508K kexin
si2307ds-3.pdf
SMD Type MOSFETP-Channel Enhancement MOSFET SI2307DS (KI2307DS)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.1 Features3 VDS (V) =-30V ID =-3.0A (VGS =-10V) RDS(ON) 80m (VGS =-10V)1 2+0.02+0.1 RDS(ON) 140m (VGS =-4.5V)0.15 -0.020.95-0.1+0.11.9-0.2G 13 D1. GateS 22. Source3. Drain Absolute Maximum Ratings Ta = 25
8.9. Size:1880K kexin
si2307bds.pdf
SMD Type MOSFETP-Channel Enhancement MOSFET SI2307BDS (KI2307BDS) FeaturesSOT-23Unit: mm+0.12.9 -0.1 VDS (V) =-30V+0.10.4 -0.1 RDS(ON) 78m (VGS =-10V) 3 RDS(ON) 130m (VGS =-4.5V)1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1G 11.Gate3 D2.SourceS 23.Drain Absolute Maximum Ratings Ta = 25Parameter Symbol 5 sec Stead
8.10. Size:1919K kexin
si2307bds-3.pdf
SMD Type MOSFETP-Channel Enhancement MOSFET SI2307BDS (KI2307BDS)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.1 Features 3 VDS (V) =-30V RDS(ON) 78m (VGS =-10V) RDS(ON) 130m (VGS =-4.5V)1 2+0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.2G 13 D1. GateS 2 2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol 5 sec
8.11. Size:1508K kexin
si2307ds ki2307ds.pdf
SMD Type MOSFETP-Channel Enhancement MOSFET SI2307DS (KI2307DS)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.1 Features3 VDS (V) =-30V ID =-3.0A (VGS =-10V) RDS(ON) 80m (VGS =-10V)1 2+0.02+0.1 RDS(ON) 140m (VGS =-4.5V)0.15 -0.020.95-0.1+0.11.9-0.2G 13 D1. GateS 22. Source3. Drain Absolute Maximum Ratings Ta = 25
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