ST2317S23RG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ST2317S23RG
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 10 nS
Cossⓘ - Capacitancia de salida: 95 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.045 Ohm
Paquete / Cubierta: SOT23
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ST2317S23RG Datasheet (PDF)
st2317s23rg.pdf

ST2317S23RG P Channel Enhancement Mode MOSFET -5.0A DESCRIPTION ST2317S23RG is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and
st2310hi.pdf

ST2310HIHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR NEW SERIES, ENHANCED PERFORMANCE FULLY INSULATED PACKAGE (U.L.COMPLIANT) FOR EASY MOUNTING HIGH VOLTAGE CAPABILITY ( > 1500 V) HIGH SWITCHING SPEED TIGTHER hfe CONTROL IMPROVED RUGGEDNESS3APPLICATIONS: 2 HORIZONTAL DEFLECTION FOR1MONITORS 15" AND HIGH END TVSISOWATT218DESCRIPTION The device is manu
st2310dhi.pdf

ST2310DHIHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR NEW SERIES, ENHANCED PERFORMANCE FULLY INSULATED PACKAGE (U.L.COMPLIANT) FOR EASY MOUNTING INTEGRATED FREE WHEELING DIODE HIGH VOLTAGE CAPABILITY (> 1500 V) HIGH SWITCHING SPEED TIGTHER hfe CONTROL IMPROVED RUGGEDNESS32APPLICATIONS: 1 HORIZONTAL DEFLECTION HIGH END TVSISOWATT218DESCRIPTION The devi
st2310dhi.pdf

ST2310DHIHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR NEW SERIES, ENHANCED PERFORMANCE FULLY INSULATED PACKAGE (U.L.COMPLIANT) FOR EASY MOUNTING INTEGRATED FREE WHEELING DIODE HIGH VOLTAGE CAPABILITY (> 1500 V) HIGH SWITCHING SPEED TIGTHER hfe CONTROL IMPROVED RUGGEDNESS32APPLICATIONS: 1 HORIZONTAL DEFLECTION HIGH END TVSISOWATT218DESCRIPTION The devi
Otros transistores... SI2307A , SI2308A , SI2309A , SI2312A , SI2318A , SI2328A , SVT078R0ND , ST18N10D , IRFB3607 , ST2341SRG , ST3424 , ST3426 , STC4301D , STC6301D , STN2610D , STN4260 , STP4441 .
History: TPC8128 | OSG65R125FSF | 2N5398 | LSD65R280HT | UT4414 | AP85U03GMT-HF | TWS6604FL
History: TPC8128 | OSG65R125FSF | 2N5398 | LSD65R280HT | UT4414 | AP85U03GMT-HF | TWS6604FL



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