ST2317S23RG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ST2317S23RG
Código: 17*
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 VQgⓘ - Carga de la puerta: 18 nC
trⓘ - Tiempo de subida: 10 nS
Cossⓘ - Capacitancia de salida: 95 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.045 Ohm
Paquete / Cubierta: SOT23
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ST2317S23RG Datasheet (PDF)
st2317s23rg.pdf
ST2317S23RG P Channel Enhancement Mode MOSFET -5.0A DESCRIPTION ST2317S23RG is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and
st2310hi.pdf
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st2310dhi.pdf
ST2310DHIHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR NEW SERIES, ENHANCED PERFORMANCE FULLY INSULATED PACKAGE (U.L.COMPLIANT) FOR EASY MOUNTING INTEGRATED FREE WHEELING DIODE HIGH VOLTAGE CAPABILITY (> 1500 V) HIGH SWITCHING SPEED TIGTHER hfe CONTROL IMPROVED RUGGEDNESS32APPLICATIONS: 1 HORIZONTAL DEFLECTION HIGH END TVSISOWATT218DESCRIPTION The devi
st2310dhi.pdf
ST2310DHIHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR NEW SERIES, ENHANCED PERFORMANCE FULLY INSULATED PACKAGE (U.L.COMPLIANT) FOR EASY MOUNTING INTEGRATED FREE WHEELING DIODE HIGH VOLTAGE CAPABILITY (> 1500 V) HIGH SWITCHING SPEED TIGTHER hfe CONTROL IMPROVED RUGGEDNESS32APPLICATIONS: 1 HORIZONTAL DEFLECTION HIGH END TVSISOWATT218DESCRIPTION The devi
st2318srg.pdf
ST2318SRG N Channel Enhancement Mode MOSFET 3.9A DESCRIPTION ST2318SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and noteb
st2319srg.pdf
ST2319SRG P Channel Enhancement Mode MOSFET -3.5A DESCRIPTION ST2319SRG is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and not
wst2315.pdf
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wst2314.pdf
WST2314N-Channel MOSFETGeneral Description Product SummeryThe WST2314 is the highest performance trench BVDSS RDSON ID N-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge 20V 26m 5.5Afor most of the small power switching and load switch applications. Applications The WST2314 meet the RoHS and Green Product requirement with full f
wst2316a.pdf
WST2316AN-Channel MOSFETGeneral Description Product SummeryThe WST2316A is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density , which provide excellent RDSON and 20V 26m 5.5Agate charge for most of the small power switching and load switch applications. Applications The WST2316A meet the RoHS and Green Product requirement with ful
wst2319.pdf
WST2319P-Ch MOSFETProduct SummeryGeneral Description The WST2319 is the highest performance trench BVDSS RDSON ID P-ch MOSFET with extreme high cell density ,which provide excellent RDSON and gate charge-40V 35m -6Afor most of the synchronous buck converterapplications .Applications The WST2319 meet the RoHS and Green Product High Frequency Point-of-Load Synchronou
st2315s23r.pdf
ST2315S23Rwww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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