ST2317S23RG PDF and Equivalents Search

ST2317S23RG P Channel Enhancement Mode MOSFET -5.0A DESCRIPTION ST2317S23RG is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and ... See More ⇒

ST2310HI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR NEW SERIES, ENHANCED PERFORMANCE FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING HIGH VOLTAGE CAPABILITY ( > 1500 V) HIGH SWITCHING SPEED TIGTHER hfe CONTROL IMPROVED RUGGEDNESS 3 APPLICATIONS 2 HORIZONTAL DEFLECTION FOR 1 MONITORS 15" AND HIGH END TVS ISOWATT218 DESCRIPTION The device is manu... See More ⇒

ST2310DHI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR NEW SERIES, ENHANCED PERFORMANCE FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING INTEGRATED FREE WHEELING DIODE HIGH VOLTAGE CAPABILITY (> 1500 V) HIGH SWITCHING SPEED TIGTHER hfe CONTROL IMPROVED RUGGEDNESS 3 2 APPLICATIONS 1 HORIZONTAL DEFLECTION HIGH END TVS ISOWATT218 DESCRIPTION The devi... See More ⇒

ST2310DHI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR NEW SERIES, ENHANCED PERFORMANCE FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING INTEGRATED FREE WHEELING DIODE HIGH VOLTAGE CAPABILITY (> 1500 V) HIGH SWITCHING SPEED TIGTHER hfe CONTROL IMPROVED RUGGEDNESS 3 2 APPLICATIONS 1 HORIZONTAL DEFLECTION HIGH END TVS ISOWATT218 DESCRIPTION The devi... See More ⇒

ST2318SRG N Channel Enhancement Mode MOSFET 3.9A DESCRIPTION ST2318SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and noteb... See More ⇒

ST2319SRG P Channel Enhancement Mode MOSFET -3.5A DESCRIPTION ST2319SRG is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and not... See More ⇒

WST2315 P-Ch MOSFET General Description Product Summery The WST2315 is the highest performance BVDSS RDSON ID trench P-ch MOSFET with extreme high cell density,which provide excellent RDSON -4.4A -20V 50m and gate charge for most of the synchronous buck converter applications . Applications The WST2315 meet the RoHS and Green Product requirement,with full High Frequ... See More ⇒

WST2314 N-Channel MOSFET General Description Product Summery The WST2314 is the highest performance trench BVDSS RDSON ID N-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge 20V 26m 5.5A for most of the small power switching and load switch applications. Applications The WST2314 meet the RoHS and Green Product requirement with full f... See More ⇒

WST2316A N-Channel MOSFET General Description Product Summery The WST2316A is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density , which provide excellent RDSON and 20V 26m 5.5A gate charge for most of the small power switching and load switch applications. Applications The WST2316A meet the RoHS and Green Product requirement with ful... See More ⇒

WST2319 P-Ch MOSFET Product Summery General Description The WST2319 is the highest performance trench BVDSS RDSON ID P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge -40V 35m -6A for most of the synchronous buck converter applications . Applications The WST2319 meet the RoHS and Green Product High Frequency Point-of-Load Synchronou... See More ⇒

ST2315S23R www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter (SOT-... See More ⇒