ME2310 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

ME2310 datasheet

..1. Size:896K cn vbsemi
me2310.pdf pdf_icon

ME2310 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23) G 1

9.1. Size:1135K matsuki electric
me2312 me2312-g.pdf pdf_icon

ME2312/ME2312-G N-Channel 20-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME2312-G is the N-Channel logic enhancement mode power RDS(ON) 33m @VGS=4.5V field effect transistors are produced using high cell density, DMOS RDS(ON) 40m @VGS=2.5V trench technology. This high density process is especially tailored to RDS(ON) 51m @VGS=1.8V minimize on-state resist

9.2. Size:395K matsuki electric
me2313 me2313-g.pdf pdf_icon

ME2313/ME2313-G P-Channel 20V(D-S) MOSFET BSS84 GENERAL DESCRIPTION FEATURES The ME2313 is the P-Channel logic enhancement mode power field RDS(ON) 48m @VGS=-10V effect transistors are produced using high cell density, DMOS trench RDS(ON) 52m @VGS=-4.5V technology. This high density process is especially tailored to RDS(ON) 65m @VGS=-2.5V minimize on-state r

Otros transistores... TPNTA4153NT1G , TPNTJD4105CT1G , TPNTK3134NT1G , TPNTK3139PT1G , TPNTS4101PT1G , UT8205AG-AG6 , ZXMN6A11ZTA-P , CS10N70FA9R , IRF640 , ME9926 , J330 , K3150 , K4018 , MMBF170LT1G , MMDF3N04HD , MCH3409-TL , KD2306A .