ME2310 - аналоги, параметры транзистора - Справочник транзисторов

ME2310 даташит

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ME2310 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23) G 1

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ME2312/ME2312-G N-Channel 20-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME2312-G is the N-Channel logic enhancement mode power RDS(ON) 33m @VGS=4.5V field effect transistors are produced using high cell density, DMOS RDS(ON) 40m @VGS=2.5V trench technology. This high density process is especially tailored to RDS(ON) 51m @VGS=1.8V minimize on-state resist

9.2. Size:395K matsuki electric
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ME2313/ME2313-G P-Channel 20V(D-S) MOSFET BSS84 GENERAL DESCRIPTION FEATURES The ME2313 is the P-Channel logic enhancement mode power field RDS(ON) 48m @VGS=-10V effect transistors are produced using high cell density, DMOS trench RDS(ON) 52m @VGS=-4.5V technology. This high density process is especially tailored to RDS(ON) 65m @VGS=-2.5V minimize on-state r

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