ME2310 Datasheet and Replacement. Cross Reference Search

ME2310 Datasheet (PDF)

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ME2310www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)G 1

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ME2312/ME2312-G N-Channel 20-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME2312-G is the N-Channel logic enhancement mode power RDS(ON)33m@VGS=4.5V field effect transistors are produced using high cell density, DMOS RDS(ON)40m@VGS=2.5V trench technology. This high density process is especially tailored to RDS(ON)51m@VGS=1.8V minimize on-state resist

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ME2313/ME2313-GP-Channel 20V(D-S) MOSFET BSS84 GENERAL DESCRIPTION FEATURES The ME2313 is the P-Channel logic enhancement mode power field RDS(ON)48m@VGS=-10V effect transistors are produced using high cell density, DMOS trench RDS(ON)52m@VGS=-4.5V technology. This high density process is especially tailored to RDS(ON)65m@VGS=-2.5V minimize on-state r

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , AON7506 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .