J330 Todos los transistores

 ..1. Size:255K  cn vbsemi
 j330.pdf

J330 www.VBsemi.com P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) Definition TrenchFET Power MOSFET 0.050 at VGS = - 10 V - 30 - 60 67 100 % Rg and UIS Tested 0.060 at VGS = - 4.5 V - 24 Compliant to RoHS Directive 2002/95/EC TO-220 FULLPAK S G S D D G P-Channel MOS

 0.1. Size:338K  nec
 2sj330.pdf

 0.2. Size:1236K  rohm
 rcj330n25.pdf

Data Sheet 10V Drive Nch MOSFET RCJ330N25 Structure Dimensions (Unit mm) Silicon N-channel MOSFET LPTS 10.1 4.5 1.3 Features 1.24 1) Low on-resistance. 2.54 0.4 2) Fast switching speed. 0.78 2.7 5.08 3) Gate-source voltage (1) (2) (3) VGSS garanteed to be 30V . 4) High package power. Application Inner circuit Switching 1 Packaging specifications

 0.3. Size:499K  panasonic
 fj3303010l.pdf

Doc No. TT4-EA-12653 Revision. 3 Product Standards MOS FET FJ3303010L FJ3303010L Silicon P-channel MOSFET Unit mm For switching 1.2 FJ350301 in SSSMini3 type package 0.3 0.13 3 Features Low drive voltage 2.5 V drive Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL Level 1 compliant) 12 Marking Symbol U1 0.2 0.52 (0.4)(0.4) Packaging 0.8

 0.4. Size:491K  panasonic
 fj330301.pdf

This product complies with the RoHS Directive (EU 2002/95/EC). FJ330301 Silicon P-channel MOS FET For switching circuits Overview Package FJ330301 is P-channel small signal MOS FET employed small size surface Code mounting package. SSSMini3-F2-B Pin Name Features 1 Gate Low drain-source ON resistance RDS(on) typ. = 4 W (VGS = -4.0 V) 2 Source H

 0.5. Size:278K  panasonic
 fc8j3304.pdf

This product complies with the RoHS Directive (EU 2002/95/EC). FC8J3304 Silicon N-channel MOS FET For DC-DC converter circuits Overview Package FC8J3304 is N-channel dual type small signal MOS FET employed small size Code surface mounting package. WMini8-F1 Package dimension clicks here. Click! Features Low drain-source ON resistance RDS(on) typ. = 32 mW (VGS

 0.6. Size:254K  inchange semiconductor
 rcj330n25.pdf

isc N-Channel MOSFET Transistor RCJ330N25 FEATURES Drain Current I = 33A@ T =25 D C Drain Source Voltage- V =250V(Min) DSS Static Drain-Source On-Resistance R = 105m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp