J330 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: J330
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 41.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 30 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 230 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0504 Ohm
   Paquete / Cubierta: TO220FP

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J330 Datasheet (PDF)

..1. Size:255K cn vbsemi
j330.pdf

J330www.VBsemi.comP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () Max. ID (A) Qg (Typ.)Definition TrenchFET Power MOSFET0.050 at VGS = - 10 V- 30- 60 67 100 % Rg and UIS Tested0.060 at VGS = - 4.5 V - 24 Compliant to RoHS Directive 2002/95/ECTO-220 FULLPAK SGS DDGP-Channel MOS

0.1. Size:338K nec
2sj330.pdf

0.2. Size:1236K rohm
rcj330n25.pdf

Data Sheet10V Drive Nch MOSFET RCJ330N25 Structure Dimensions (Unit : mm)Silicon N-channel MOSFETLPTS10.1 4.51.3Features1.241) Low on-resistance.2.54 0.42) Fast switching speed. 0.782.75.083) Gate-source voltage (1) (2) (3)VGSS garanteed to be 30V .4) High package power.Application Inner circuitSwitching1Packaging specifications

0.3. Size:499K panasonic
fj3303010l.pdf

Doc No. TT4-EA-12653Revision. 3Product StandardsMOS FETFJ3303010LFJ3303010LSilicon P-channel MOSFETUnit : mm For switching1.2FJ350301 in SSSMini3 type package 0.3 0.133 Features Low drive voltage : 2.5 V drive Halogen-free / RoHS compliant(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)12 Marking Symbol :U10.2 0.52(0.4)(0.4) Packaging0.8

0.4. Size:491K panasonic
fj330301.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).FJ330301Silicon P-channel MOS FETFor switching circuits Overview PackageFJ330301 is P-channel small signal MOS FET employed small size surface Codemounting package. SSSMini3-F2-B Pin Name Features 1: Gate Low drain-source ON resistance: RDS(on) typ. = 4 W (VGS = -4.0 V) 2: Source H

0.5. Size:278K panasonic
fc8j3304.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).FC8J3304Silicon N-channel MOS FETFor DC-DC converter circuits Overview PackageFC8J3304 is N-channel dual type small signal MOS FET employed small size Codesurface mounting package. WMini8-F1Package dimension clicks here. Click! Features Low drain-source ON resistance: RDS(on) typ. = 32 mW (VGS

0.6. Size:254K inchange semiconductor
rcj330n25.pdf

isc N-Channel MOSFET Transistor RCJ330N25FEATURESDrain Current I = 33A@ T =25D CDrain Source Voltage-: V =250V(Min)DSSStatic Drain-Source On-Resistance: R = 105m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

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