J330 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: J330
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 41.7 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 30 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 11 ns
Cossⓘ - Выходная емкость: 230 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0504 Ohm
Тип корпуса: TO220FP
J330 Datasheet (PDF)
j330.pdf
J330www.VBsemi.comP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () Max. ID (A) Qg (Typ.)Definition TrenchFET Power MOSFET0.050 at VGS = - 10 V- 30- 60 67 100 % Rg and UIS Tested0.060 at VGS = - 4.5 V - 24 Compliant to RoHS Directive 2002/95/ECTO-220 FULLPAK SGS DDGP-Channel MOS
rcj330n25.pdf
Data Sheet10V Drive Nch MOSFET RCJ330N25 Structure Dimensions (Unit : mm)Silicon N-channel MOSFETLPTS10.1 4.51.3Features1.241) Low on-resistance.2.54 0.42) Fast switching speed. 0.782.75.083) Gate-source voltage (1) (2) (3)VGSS garanteed to be 30V .4) High package power.Application Inner circuitSwitching1Packaging specifications
fj3303010l.pdf
Doc No. TT4-EA-12653Revision. 3Product StandardsMOS FETFJ3303010LFJ3303010LSilicon P-channel MOSFETUnit : mm For switching1.2FJ350301 in SSSMini3 type package 0.3 0.133 Features Low drive voltage : 2.5 V drive Halogen-free / RoHS compliant(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)12 Marking Symbol :U10.2 0.52(0.4)(0.4) Packaging0.8
fj330301.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).FJ330301Silicon P-channel MOS FETFor switching circuits Overview PackageFJ330301 is P-channel small signal MOS FET employed small size surface Codemounting package. SSSMini3-F2-B Pin Name Features 1: Gate Low drain-source ON resistance: RDS(on) typ. = 4 W (VGS = -4.0 V) 2: Source H
fc8j3304.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).FC8J3304Silicon N-channel MOS FETFor DC-DC converter circuits Overview PackageFC8J3304 is N-channel dual type small signal MOS FET employed small size Codesurface mounting package. WMini8-F1Package dimension clicks here. Click! Features Low drain-source ON resistance: RDS(on) typ. = 32 mW (VGS
rcj330n25.pdf
isc N-Channel MOSFET Transistor RCJ330N25FEATURESDrain Current I = 33A@ T =25D CDrain Source Voltage-: V =250V(Min)DSSStatic Drain-Source On-Resistance: R = 105m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
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