J330
MOSFET. Datasheet pdf. Equivalent
Type Designator: J330
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 41.7
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 30
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 67
nC
trⓘ - Rise Time: 11
nS
Cossⓘ -
Output Capacitance: 230
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0504
Ohm
Package:
TO220FP
J330
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
J330
Datasheet (PDF)
..1. Size:255K cn vbsemi
j330.pdf 
J330www.VBsemi.comP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () Max. ID (A) Qg (Typ.)Definition TrenchFET Power MOSFET0.050 at VGS = - 10 V- 30- 60 67 100 % Rg and UIS Tested0.060 at VGS = - 4.5 V - 24 Compliant to RoHS Directive 2002/95/ECTO-220 FULLPAK SGS DDGP-Channel MOS
0.2. Size:1236K rohm
rcj330n25.pdf
Data Sheet10V Drive Nch MOSFET RCJ330N25 Structure Dimensions (Unit : mm)Silicon N-channel MOSFETLPTS10.1 4.51.3Features1.241) Low on-resistance.2.54 0.42) Fast switching speed. 0.782.75.083) Gate-source voltage (1) (2) (3)VGSS garanteed to be 30V .4) High package power.Application Inner circuitSwitching1Packaging specifications
0.3. Size:499K panasonic
fj3303010l.pdf
Doc No. TT4-EA-12653Revision. 3Product StandardsMOS FETFJ3303010LFJ3303010LSilicon P-channel MOSFETUnit : mm For switching1.2FJ350301 in SSSMini3 type package 0.3 0.133 Features Low drive voltage : 2.5 V drive Halogen-free / RoHS compliant(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)12 Marking Symbol :U10.2 0.52(0.4)(0.4) Packaging0.8
0.4. Size:491K panasonic
fj330301.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).FJ330301Silicon P-channel MOS FETFor switching circuits Overview PackageFJ330301 is P-channel small signal MOS FET employed small size surface Codemounting package. SSSMini3-F2-B Pin Name Features 1: Gate Low drain-source ON resistance: RDS(on) typ. = 4 W (VGS = -4.0 V) 2: Source H
0.5. Size:278K panasonic
fc8j3304.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).FC8J3304Silicon N-channel MOS FETFor DC-DC converter circuits Overview PackageFC8J3304 is N-channel dual type small signal MOS FET employed small size Codesurface mounting package. WMini8-F1Package dimension clicks here. Click! Features Low drain-source ON resistance: RDS(on) typ. = 32 mW (VGS
0.6. Size:254K inchange semiconductor
rcj330n25.pdf
isc N-Channel MOSFET Transistor RCJ330N25FEATURESDrain Current I = 33A@ T =25D CDrain Source Voltage-: V =250V(Min)DSSStatic Drain-Source On-Resistance: R = 105m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
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