MCH3409-TL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MCH3409-TL
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.56 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 400 nS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.045 Ohm
Paquete / Cubierta: SOT323
- Selección de transistores por parámetros
MCH3409-TL Datasheet (PDF)
mch3409-tl.pdf

MCH3409-TLwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.036 at VGS = 10 V 4 TrenchFET Power MOSFET20 0.040 at VGS = 4.5 V 3.8 4 nC Typical ESD Protection 2000 V HBM0.048 at VGS = 2.5 V 3.6 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC
mch3409.pdf

Ordering number : ENN6911MCH3409N-Channel Silicon MOSFETMCH3409Ultrahigh-Speed Switching ApplicationsPreliminaryFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2167 2.5V drive.[MCH3409]0.3 0.1531 20.652.01 : Gate2 : Source3 : DrainSpecificationsSANYO : MCPH3Absolute Maximum Ratings at Ta=25CParameter Symb
mch3406.pdf

Ordering number : ENN7010MCH3406N-Channel Silicon MOSFETMCH3406Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-state resistance. unit : mm Ultrahigh-speed switching. 2167A 1.8V drive.[MCH3406]0.30.1532 10.652.031 : Gate2 : Source3 : DrainSANYO : MCPH3Specifications1 2Absolute Maximum Ratings at Ta=25CParameter S
mch3405.pdf

Ordering number : ENN6940MCH3405N-Channel Silicon MOSFETMCH3405Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2167 1.8V drive.[MCH3405]0.3 0.1531 20.652.01 : Gate2 : Source3 : DrainSANYO : MCPH3SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: DMN1002UCA6 | CJBD3020 | 1N60L-TMS-T | DMN2114SN | AP3P7R0EMT | G2503 | NCEP12T15
History: DMN1002UCA6 | CJBD3020 | 1N60L-TMS-T | DMN2114SN | AP3P7R0EMT | G2503 | NCEP12T15



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: DHF10H035R | DHF100N03B13 | DHF035N04 | DHEZ24B31 | DHESJ17N65 | DHESJ13N65 | DHESJ11N65 | DHE9Z24 | DHE90N055R | DHE90N045R | DHE85N08 | DHE8290 | DHE80N08B22 | DHE8004 | DHE50N15 | DHE50N06FZC
Popular searches
2sc1222 | 2sc2581 | c1061 transistor | 2sc1451 | c3199 transistor | 2n2712 datasheet | 2sc2525 | tip73