MCH3409-TL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MCH3409-TL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 1.56 W
   Voltaje máximo drenador - fuente |Vds|: 20 V
   Voltaje máximo fuente - puerta |Vgs|: 12 V
   Corriente continua de drenaje |Id|: 4 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 1.3 V
   Carga de la puerta (Qg): 8.8 nC
   Tiempo de subida (tr): 400 nS
   Resistencia entre drenaje y fuente RDS(on): 0.045 Ohm
   Paquete / Cubierta: SOT323

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MCH3409-TL Datasheet (PDF)

..1. Size:1844K cn vbsemi
mch3409-tl.pdf

MCH3409-TLwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.036 at VGS = 10 V 4 TrenchFET Power MOSFET20 0.040 at VGS = 4.5 V 3.8 4 nC Typical ESD Protection 2000 V HBM0.048 at VGS = 2.5 V 3.6 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC

7.1. Size:26K sanyo
mch3409.pdf

Ordering number : ENN6911MCH3409N-Channel Silicon MOSFETMCH3409Ultrahigh-Speed Switching ApplicationsPreliminaryFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2167 2.5V drive.[MCH3409]0.3 0.1531 20.652.01 : Gate2 : Source3 : DrainSpecificationsSANYO : MCPH3Absolute Maximum Ratings at Ta=25CParameter Symb

8.1. Size:27K sanyo
mch3406.pdf

Ordering number : ENN7010MCH3406N-Channel Silicon MOSFETMCH3406Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-state resistance. unit : mm Ultrahigh-speed switching. 2167A 1.8V drive.[MCH3406]0.30.1532 10.652.031 : Gate2 : Source3 : DrainSANYO : MCPH3Specifications1 2Absolute Maximum Ratings at Ta=25CParameter S

8.2. Size:27K sanyo
mch3405.pdf

Ordering number : ENN6940MCH3405N-Channel Silicon MOSFETMCH3405Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2167 1.8V drive.[MCH3405]0.3 0.1531 20.652.01 : Gate2 : Source3 : DrainSANYO : MCPH3SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions

8.3. Size:41K sanyo
mch3401.pdf

Ordering number:ENN6443N-Channel Silicon MOSFETMCH3401Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed swithcing.2167 2.5V drive.[MCH3401]0.3 0.1531 20.652.01 : Gate2 : Source3 : DrainSANYO : MCPH3SpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Conditions Ratings

8.4. Size:27K sanyo
mch3408.pdf

Ordering number : ENN7011MCH3408N-Channel Silicon MOSFETMCH3408Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2167A 4V drive.[MCH3408]0.30.1532 10.652.031 : Gate2 : Source3 : DrainSpecifications SANYO : MCPH31 2Absolute Maximum Ratings at Ta=25CParameter Symbol Con

8.5. Size:40K sanyo
mch3402.pdf

Ordering number:ENN6444N-Channel Silicon MOSFETMCH3402Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed swithcing.2167 4V drive.[MCH3402]0.3 0.1531 20.652.01 : Gate2 : Source3 : DrainSANYO : MCPH3SpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Conditions Ratings Un

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