All MOSFET. MCH3409-TL Datasheet

 

MCH3409-TL MOSFET. Datasheet pdf. Equivalent


   Type Designator: MCH3409-TL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.56 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.3 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 8.8 nC
   trⓘ - Rise Time: 400 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: SOT323

 MCH3409-TL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MCH3409-TL Datasheet (PDF)

 ..1. Size:1844K  cn vbsemi
mch3409-tl.pdf

MCH3409-TL
MCH3409-TL

MCH3409-TLwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.036 at VGS = 10 V 4 TrenchFET Power MOSFET20 0.040 at VGS = 4.5 V 3.8 4 nC Typical ESD Protection 2000 V HBM0.048 at VGS = 2.5 V 3.6 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC

 7.1. Size:26K  sanyo
mch3409.pdf

MCH3409-TL
MCH3409-TL

Ordering number : ENN6911MCH3409N-Channel Silicon MOSFETMCH3409Ultrahigh-Speed Switching ApplicationsPreliminaryFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2167 2.5V drive.[MCH3409]0.3 0.1531 20.652.01 : Gate2 : Source3 : DrainSpecificationsSANYO : MCPH3Absolute Maximum Ratings at Ta=25CParameter Symb

 8.1. Size:27K  sanyo
mch3406.pdf

MCH3409-TL
MCH3409-TL

Ordering number : ENN7010MCH3406N-Channel Silicon MOSFETMCH3406Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-state resistance. unit : mm Ultrahigh-speed switching. 2167A 1.8V drive.[MCH3406]0.30.1532 10.652.031 : Gate2 : Source3 : DrainSANYO : MCPH3Specifications1 2Absolute Maximum Ratings at Ta=25CParameter S

 8.2. Size:27K  sanyo
mch3405.pdf

MCH3409-TL
MCH3409-TL

Ordering number : ENN6940MCH3405N-Channel Silicon MOSFETMCH3405Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2167 1.8V drive.[MCH3405]0.3 0.1531 20.652.01 : Gate2 : Source3 : DrainSANYO : MCPH3SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions

 8.3. Size:41K  sanyo
mch3401.pdf

MCH3409-TL
MCH3409-TL

Ordering number:ENN6443N-Channel Silicon MOSFETMCH3401Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed swithcing.2167 2.5V drive.[MCH3401]0.3 0.1531 20.652.01 : Gate2 : Source3 : DrainSANYO : MCPH3SpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Conditions Ratings

 8.4. Size:27K  sanyo
mch3408.pdf

MCH3409-TL
MCH3409-TL

Ordering number : ENN7011MCH3408N-Channel Silicon MOSFETMCH3408Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2167A 4V drive.[MCH3408]0.30.1532 10.652.031 : Gate2 : Source3 : DrainSpecifications SANYO : MCPH31 2Absolute Maximum Ratings at Ta=25CParameter Symbol Con

 8.5. Size:40K  sanyo
mch3402.pdf

MCH3409-TL
MCH3409-TL

Ordering number:ENN6444N-Channel Silicon MOSFETMCH3402Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed swithcing.2167 4V drive.[MCH3402]0.3 0.1531 20.652.01 : Gate2 : Source3 : DrainSANYO : MCPH3SpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Conditions Ratings Un

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