IRLU110P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRLU110P
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 61 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 15 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 VQgⓘ - Carga de la puerta: 20 nC
trⓘ - Tiempo de subida: 35 nS
Cossⓘ - Capacitancia de salida: 110 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.110(typ) Ohm
Paquete / Cubierta: TO251
Búsqueda de reemplazo de MOSFET IRLU110P
IRLU110P Datasheet (PDF)
irlu110p.pdf
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IRLU110Pwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY DT-Trench Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature0.115 at VGS = 10 V15 100 % Rg Tested1000.120 at VGS = 6 V 15APPLICATIONS Primary Side SwitchTO-251DGSG D SN-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise
irlr110pbf irlu110pbf.pdf
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PD - 95601AIRLR110PbFIRLU110PbF Lead-Free1/10/05Document Number: 91323 www.vishay.com1IRLR/U110PbFDocument Number: 91323 www.vishay.com2IRLR/U110PbFDocument Number: 91323 www.vishay.com3IRLR/U110PbFDocument Number: 91323 www.vishay.com4IRLR/U110PbFDocument Number: 91323 www.vishay.com5IRLR/U110PbFDocument Number: 91323 www.vishay.com6IRLR/U11
irlr110 irlu110 irlr110pbf irlu110pbf sihlr110 sihlu110.pdf
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IRLR110, IRLU110, SiHLR110, SiHLU110Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 100Definition Dynamic dV/dt RatingRDS(on) ()VGS = 5.0 V 0.54 Repetitive Avalanche RatedQg (Max.) (nC) 6.1 Surface Mount (IRLR110, SiHLR110)Qgs (nC) 2.0 Straight Lead (IRLU110, SiHLU110)Qgd (nC) 3.3 Available i
irlr110a irlu110a.pdf
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IRLR/U110AFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.44 Rugged Gate Oxide Technology Lower Input CapacitanceID = 4.7 A Improved Gate Charge Extended Safe Operating AreaD-PAK I-PAK Lower Leakage Current: 10A (Max.) @ VDS = 100V Lower RDS(ON): 0.336 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum Ratings
irlr110 irlu110 sihlr110 sihlu110.pdf
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IRLR110, IRLU110, SiHLR110, SiHLU110Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 100Definition Dynamic dV/dt RatingRDS(on) ()VGS = 5.0 V 0.54 Repetitive Avalanche RatedQg (Max.) (nC) 6.1 Surface Mount (IRLR110, SiHLR110)Qgs (nC) 2.0 Straight Lead (IRLU110, SiHLU110)Qgd (nC) 3.3 Available i
irlu110a.pdf
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isc N-Channel MOSFET Transistor IRLU110AFEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
![IRLU110P](https://alltransistors.com/images/us.png)
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