IRLU110P MOSFET Datasheet: N-Ch, 100V, 15A. Full specification with pinout and replacement list

IRLU110P Specs and Replacement

   Type Designator: IRLU110P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 61 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.110(typ) Ohm
   Package: TO251

IRLU110P substitution

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IRLU110P datasheet

..1. Size:843K cn vbsemi
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IRLU110P www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY DT-Trench Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 0.115 at VGS = 10 V 15 100 % Rg Tested 100 0.120 at VGS = 6 V 15 APPLICATIONS Primary Side Switch TO-251 D G S G D S N-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise ... See More ⇒

0.1. Size:1177K international rectifier
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PD - 95601A IRLR110PbF IRLU110PbF Lead-Free 1/10/05 Document Number 91323 www.vishay.com 1 IRLR/U110PbF Document Number 91323 www.vishay.com 2 IRLR/U110PbF Document Number 91323 www.vishay.com 3 IRLR/U110PbF Document Number 91323 www.vishay.com 4 IRLR/U110PbF Document Number 91323 www.vishay.com 5 IRLR/U110PbF Document Number 91323 www.vishay.com 6 IRLR/U11... See More ⇒

0.2. Size:2150K vishay
irlr110 irlu110 irlr110pbf irlu110pbf sihlr110 sihlu110.pdf pdf_icon

IRLR110, IRLU110, SiHLR110, SiHLU110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 100 Definition Dynamic dV/dt Rating RDS(on) ( )VGS = 5.0 V 0.54 Repetitive Avalanche Rated Qg (Max.) (nC) 6.1 Surface Mount (IRLR110, SiHLR110) Qgs (nC) 2.0 Straight Lead (IRLU110, SiHLU110) Qgd (nC) 3.3 Available i... See More ⇒

7.1. Size:244K fairchild semi
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IRLR/U110A FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.44 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.7 A Improved Gate Charge Extended Safe Operating Area D-PAK I-PAK Lower Leakage Current 10 A (Max.) @ VDS = 100V Lower RDS(ON) 0.336 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings... See More ⇒