LR8103V Todos los transistores

 

LR8103V MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: LR8103V

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 3.75 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 35.8 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11 nS

Cossⓘ - Capacitancia de salida: 1525 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.002 typ Ohm

Encapsulados: TO252

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LR8103V datasheet

 ..1. Size:1007K  cn vbsemi
lr8103v.pdf pdf_icon

LR8103V

LR8103V www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.002 at VGS = 10 V 100 30 72 nC 0.003 at VGS = 4.5 V 90 APPLICATIONS D OR-ing Server TO-252 DC/DC G G D S Top View S N-Channel MOSFET ABSOL

 0.1. Size:209K  international rectifier
irlr8103vpbf.pdf pdf_icon

LR8103V

PD - 95093A IRLR8103VPbF N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses D Minimizes Parallel MOSFETs for high current applications 100% RG Tested Lead-Free G Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance S D-Pak of

 0.2. Size:111K  international rectifier
irlr8103v.pdf pdf_icon

LR8103V

PD-94021A IRLR8103V N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses D Low Switching Losses Minimizes Parallel MOSFETs for high current applications Description G This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced S D-

 0.3. Size:847K  cn vbsemi
irlr8103vtr.pdf pdf_icon

LR8103V

IRLR8103VTR www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.002 at VGS = 10 V 100 30 72 nC 0.003 at VGS = 4.5 V 90 APPLICATIONS D OR-ing Server TO-252 DC/DC G G D S Top View S N-Channel MOSFET A

Otros transistores... K2543-FP , K3569 , K3569-FP , K4145 , KD2301 , KD3422A , KD4953 , LR024N , K3569 , LU120N , MDD1653RH , MDU2657RH , MDV1595SU , ME20N10 , ME4410 , MEM2301 , MEM2302 .

History: IXFC52N30P | IXFC16N80P

 

 

 

 

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