LR8103V PDF and Equivalents Search

 

LR8103V Specs and Replacement

Type Designator: LR8103V

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 35.8 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 1525 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.002 typ Ohm

Package: TO252

LR8103V substitution

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LR8103V datasheet

 ..1. Size:1007K  cn vbsemi
lr8103v.pdf pdf_icon

LR8103V

LR8103V www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.002 at VGS = 10 V 100 30 72 nC 0.003 at VGS = 4.5 V 90 APPLICATIONS D OR-ing Server TO-252 DC/DC G G D S Top View S N-Channel MOSFET ABSOL... See More ⇒

 0.1. Size:209K  international rectifier
irlr8103vpbf.pdf pdf_icon

LR8103V

PD - 95093A IRLR8103VPbF N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses D Minimizes Parallel MOSFETs for high current applications 100% RG Tested Lead-Free G Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance S D-Pak of... See More ⇒

 0.2. Size:111K  international rectifier
irlr8103v.pdf pdf_icon

LR8103V

PD-94021A IRLR8103V N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses D Low Switching Losses Minimizes Parallel MOSFETs for high current applications Description G This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced S D-... See More ⇒

 0.3. Size:847K  cn vbsemi
irlr8103vtr.pdf pdf_icon

LR8103V

IRLR8103VTR www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.002 at VGS = 10 V 100 30 72 nC 0.003 at VGS = 4.5 V 90 APPLICATIONS D OR-ing Server TO-252 DC/DC G G D S Top View S N-Channel MOSFET A... See More ⇒

Detailed specifications: K2543-FP, K3569, K3569-FP, K4145, KD2301, KD3422A, KD4953, LR024N, K3569, LU120N, MDD1653RH, MDU2657RH, MDV1595SU, ME20N10, ME4410, MEM2301, MEM2302

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