Справочник MOSFET. LR8103V

 

LR8103V MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: LR8103V
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 3.75 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 35.8 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 151 nC
   trⓘ - Время нарастания: 11 ns
   Cossⓘ - Выходная емкость: 1525 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.002(typ) Ohm
   Тип корпуса: TO252

 Аналог (замена) для LR8103V

 

 

LR8103V Datasheet (PDF)

 ..1. Size:1007K  cn vbsemi
 lr8103v.pdf

LR8103V LR8103V

LR8103Vwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.002 at VGS = 10 V 10030 72 nC0.003 at VGS = 4.5 V 90APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D STop ViewSN-Channel MOSFETABSOL

 0.1. Size:209K  international rectifier
 irlr8103vpbf.pdf

LR8103V LR8103V

PD - 95093AIRLR8103VPbF N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching LossesD Minimizes Parallel MOSFETs for high currentapplications 100% RG Tested Lead-FreeGDescriptionThis new device employs advanced HEXFET PowerMOSFET technology to achieve an unprecedented balanceS D-Pakof

 0.2. Size:111K  international rectifier
 irlr8103v.pdf

LR8103V LR8103V

PD-94021AIRLR8103V N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction LossesD Low Switching Losses Minimizes Parallel MOSFETs for high currentapplicationsDescriptionGThis new device employs advanced HEXFET PowerMOSFET technology to achieve an unprecedentedbalance of on-resistance and gate charge. The reducedS D-

 0.3. Size:209K  infineon
 irlr8103vpbf.pdf

LR8103V LR8103V

PD - 95093AIRLR8103VPbF N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching LossesD Minimizes Parallel MOSFETs for high currentapplications 100% RG Tested Lead-FreeGDescriptionThis new device employs advanced HEXFET PowerMOSFET technology to achieve an unprecedented balanceS D-Pakof

 0.4. Size:847K  cn vbsemi
 irlr8103vtr.pdf

LR8103V LR8103V

IRLR8103VTRwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.002 at VGS = 10 V 10030 72 nC0.003 at VGS = 4.5 V 90APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D STop ViewSN-Channel MOSFETA

 0.5. Size:262K  inchange semiconductor
 irlr8103v.pdf

LR8103V LR8103V

Isc N-Channel MOSFET Transistor IRLR8103VFEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

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