FDB024N04AL7 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDB024N04AL7  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 214 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 100 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0024 Ohm

Encapsulados: TO263 D2PAK

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FDB024N04AL7 datasheet

 ..1. Size:381K  fairchild semi
 fdb024n04al7.pdf pdf_icon

FDB024N04AL7

August 2010 FDB024N04AL7 N-Channel PowerTrench MOSFET 40V, 219A, 2.4m Features Description RDS(on) = 2.0m ( Typ.)@ VGS = 10V, ID = 80A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has been Fast Switching Speed especially tailored to minimize the on-state resistance and yet Low Gate Charge maintain superior s

 ..2. Size:1229K  onsemi
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FDB024N04AL7

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 6.1. Size:675K  fairchild semi
 fdb024n08bl7.pdf pdf_icon

FDB024N04AL7

June 2014 FDB024N08BL7 N-Channel PowerTrench MOSFET 80 V, 229 A, 2.4 m Features Description RDS(on) = 1.7 m ( Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advance PowerTrench process that has been Low FOM RDS(on) *QG tailored to minimize the on-state resistance while maintaining superior switching performance.

 6.2. Size:614K  fairchild semi
 fdb024n06.pdf pdf_icon

FDB024N04AL7

July 2008 FDB024N06 tm N-Channel PowerTrench MOSFET 60V, 265A, 2.4m Features General Description RDS(on) = 1.8m ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has been Fast switching speed especially tailored to minimize the on-state resistance and yet maintain superior switching p

MOSTRAR MÁS

Otros transistores... FDA50N50, FDA59N25, FDA59N30, FDA69N25, FDA70N20, STU404D, FDA8440, FDB016N04AL7, IRF540N, FDB024N06, FDB029N06, FDB031N08, FDB035AN06A0, FDB035N10A, STU407D, FDB039N06, FDB045AN08A0