FDB024N04AL7 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDB024N04AL7
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 214 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 100 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 VQgⓘ - Carga de la puerta: 84 nC
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0024 Ohm
Paquete / Cubierta: TO263 D2PAK
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FDB024N04AL7 Datasheet (PDF)
fdb024n04al7.pdf

August 2010FDB024N04AL7N-Channel PowerTrench MOSFET 40V, 219A, 2.4mFeatures Description RDS(on) = 2.0m ( Typ.)@ VGS = 10V, ID = 80A This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that has been Fast Switching Speedespecially tailored to minimize the on-state resistance and yet Low Gate Chargemaintain superior s
fdb024n04al7.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdb024n08bl7.pdf

June 2014FDB024N08BL7 N-Channel PowerTrench MOSFET80 V, 229 A, 2.4 mFeatures Description RDS(on) = 1.7 m ( Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using FairchildSemiconductors advance PowerTrench process that has been Low FOM RDS(on) *QGtailored to minimize the on-state resistance while maintainingsuperior switching performance.
fdb024n06.pdf

July 2008FDB024N06tmN-Channel PowerTrench MOSFET 60V, 265A, 2.4mFeatures General Description RDS(on) = 1.8m ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that has been Fast switching speed especially tailored to minimize the on-state resistance and yet maintain superior switching p
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