All MOSFET. FDB024N04AL7 Datasheet

 

FDB024N04AL7 Datasheet and Replacement


   Type Designator: FDB024N04AL7
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 214 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 84 nC
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm
   Package: TO263 D2PAK
 

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FDB024N04AL7 Datasheet (PDF)

 ..1. Size:381K  fairchild semi
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FDB024N04AL7

August 2010FDB024N04AL7N-Channel PowerTrench MOSFET 40V, 219A, 2.4mFeatures Description RDS(on) = 2.0m ( Typ.)@ VGS = 10V, ID = 80A This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that has been Fast Switching Speedespecially tailored to minimize the on-state resistance and yet Low Gate Chargemaintain superior s

 ..2. Size:1229K  onsemi
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FDB024N04AL7

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 6.1. Size:675K  fairchild semi
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FDB024N04AL7

June 2014FDB024N08BL7 N-Channel PowerTrench MOSFET80 V, 229 A, 2.4 mFeatures Description RDS(on) = 1.7 m ( Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using FairchildSemiconductors advance PowerTrench process that has been Low FOM RDS(on) *QGtailored to minimize the on-state resistance while maintainingsuperior switching performance.

 6.2. Size:614K  fairchild semi
fdb024n06.pdf pdf_icon

FDB024N04AL7

July 2008FDB024N06tmN-Channel PowerTrench MOSFET 60V, 265A, 2.4mFeatures General Description RDS(on) = 1.8m ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that has been Fast switching speed especially tailored to minimize the on-state resistance and yet maintain superior switching p

Datasheet: FDA50N50 , FDA59N25 , FDA59N30 , FDA69N25 , FDA70N20 , STU404D , FDA8440 , FDB016N04AL7 , IRF540 , FDB024N06 , FDB029N06 , FDB031N08 , FDB035AN06A0 , FDB035N10A , STU407D , FDB039N06 , FDB045AN08A0 .

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