FDB024N04AL7
MOSFET. Datasheet pdf. Equivalent
Type Designator: FDB024N04AL7
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 214
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 100
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 84
nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0024
Ohm
Package:
TO263
D2PAK
FDB024N04AL7
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDB024N04AL7
Datasheet (PDF)
..1. Size:381K fairchild semi
fdb024n04al7.pdf 
August 2010FDB024N04AL7N-Channel PowerTrench MOSFET 40V, 219A, 2.4mFeatures Description RDS(on) = 2.0m ( Typ.)@ VGS = 10V, ID = 80A This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that has been Fast Switching Speedespecially tailored to minimize the on-state resistance and yet Low Gate Chargemaintain superior s
..2. Size:1229K onsemi
fdb024n04al7.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
6.1. Size:675K fairchild semi
fdb024n08bl7.pdf
June 2014FDB024N08BL7 N-Channel PowerTrench MOSFET80 V, 229 A, 2.4 mFeatures Description RDS(on) = 1.7 m ( Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using FairchildSemiconductors advance PowerTrench process that has been Low FOM RDS(on) *QGtailored to minimize the on-state resistance while maintainingsuperior switching performance.
6.2. Size:614K fairchild semi
fdb024n06.pdf
July 2008FDB024N06tmN-Channel PowerTrench MOSFET 60V, 265A, 2.4mFeatures General Description RDS(on) = 1.8m ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that has been Fast switching speed especially tailored to minimize the on-state resistance and yet maintain superior switching p
6.3. Size:753K onsemi
fdb024n08bl7.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
6.4. Size:853K onsemi
fdb024n06.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Datasheet: IRFP344
, IRFP350
, IRFP350A
, IRFP350FI
, IRFP350LC
, IRFP351
, IRFP352
, IRFP353
, 2SK3568
, IRFP360
, IRFP360LC
, IRFP3710
, IRFP430
, IRFP431
, IRFP432
, IRFP433
, IRFP440
.
