FDB024N04AL7 - параметры транзистора MOSFET, его аналоги, datasheet

FDB024N04AL7 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

   Наименование прибора: FDB024N04AL7
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 214 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 100 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0024 Ohm
   Тип корпуса: TO263 D2PAK

Аналог (замена) для FDB024N04AL7

FDB024N04AL7 Datasheet (PDF)

..1. Size:381K fairchild semi
fdb024n04al7.pdf

August 2010FDB024N04AL7N-Channel PowerTrench MOSFET 40V, 219A, 2.4mFeatures Description RDS(on) = 2.0m ( Typ.)@ VGS = 10V, ID = 80A This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that has been Fast Switching Speedespecially tailored to minimize the on-state resistance and yet Low Gate Chargemaintain superior s

..2. Size:1229K onsemi
fdb024n04al7.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

6.1. Size:675K fairchild semi
fdb024n08bl7.pdf

June 2014FDB024N08BL7 N-Channel PowerTrench MOSFET80 V, 229 A, 2.4 mFeatures Description RDS(on) = 1.7 m ( Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using FairchildSemiconductors advance PowerTrench process that has been Low FOM RDS(on) *QGtailored to minimize the on-state resistance while maintainingsuperior switching performance.

6.2. Size:614K fairchild semi
fdb024n06.pdf

July 2008FDB024N06tmN-Channel PowerTrench MOSFET 60V, 265A, 2.4mFeatures General Description RDS(on) = 1.8m ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that has been Fast switching speed especially tailored to minimize the on-state resistance and yet maintain superior switching p

6.3. Size:753K onsemi
fdb024n08bl7.pdf