MTP60N06HD Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MTP60N06HD  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 136 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 60 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 15 nS

Cossⓘ - Capacitancia de salida: 570 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.011 typ Ohm

Encapsulados: TO220AB

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MTP60N06HD datasheet

 ..1. Size:217K  motorola
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MTP60N06HD

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP60N06HD/D Designer's Data Sheet MTP60N06HD HDTMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced high cell density HDTMOS power FET is 60 AMPERES designed to withstand high energy in the avalanche and commuta- 60 VOLTS tio

 ..2. Size:826K  cn vbsemi
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MTP60N06HD

MTP60N06HD www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.011 at VGS = 10 V 60 Material categorization 60 0.012 at VGS = 4.5 V 50 D TO-220AB G S D S G N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Lim

 7.1. Size:171K  motorola
 mtp60n05hdl.pdf pdf_icon

MTP60N06HD

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP60N05HDL/D Product Preview MTP60N05HDL HDTMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced high cell density HDTMOS power FET is 60 AMPERES designed to withstand high energy in the avalanche and commuta- 50 VOLTS tion modes.

 7.2. Size:166K  motorola
 mtp60n05hdlrev0.pdf pdf_icon

MTP60N06HD

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP60N05HDL/D Product Preview MTP60N05HDL HDTMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced high cell density HDTMOS power FET is 60 AMPERES designed to withstand high energy in the avalanche and commuta- 50 VOLTS tion modes.

MOSTRAR MÁS

Otros transistores... MMDF3P03HDR, MT2300ACTR, MT4435ACTR, MT4606, MT6680, MTD20N03HDLT4G, MTD20N06HDLT4G, MTD3055EL, STP80NF70, MTP8N06, N3PF06, NCE0117, NCE3010S, NCE3035G, NCE3080KA, NCE30H10, NCE30H12K