MTP60N06HD Todos los transistores

 

MTP60N06HD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MTP60N06HD
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 136 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 60 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 570 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.011(typ) Ohm
   Paquete / Cubierta: TO220AB
     - Selección de transistores por parámetros

 

MTP60N06HD Datasheet (PDF)

 ..1. Size:217K  motorola
 mtp60n06hd.pdf pdf_icon

MTP60N06HD

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP60N06HD/DDesigner's Data SheetMTP60N06HDHDTMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced highcell density HDTMOS power FET is 60 AMPERESdesigned to withstand high energy in the avalanche and commuta- 60 VOLTS tio

 ..2. Size:826K  cn vbsemi
 mtp60n06hd.pdf pdf_icon

MTP60N06HD

MTP60N06HDwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.011 at VGS = 10 V 60 Material categorization:600.012 at VGS = 4.5 V 50DTO-220ABGSDSGN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Lim

 7.1. Size:171K  motorola
 mtp60n05hdl.pdf pdf_icon

MTP60N06HD

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP60N05HDL/DProduct PreviewMTP60N05HDLHDTMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced highcell density HDTMOS power FET is 60 AMPERESdesigned to withstand high energy in the avalanche and commuta- 50 VOLTStion modes.

 7.2. Size:166K  motorola
 mtp60n05hdlrev0.pdf pdf_icon

MTP60N06HD

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP60N05HDL/DProduct PreviewMTP60N05HDLHDTMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced highcell density HDTMOS power FET is 60 AMPERESdesigned to withstand high energy in the avalanche and commuta- 50 VOLTStion modes.

MOSTRAR MÁS

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: TPD65R380D | IXFR80N60P3 | APT6025BVR | IXFK48N50Q | 2N7064 | FQD5N15TF | SSW65R080SFD3

 

 
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