MTP60N06HD - описание и поиск аналогов

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP60N06HD/D Designer's Data Sheet MTP60N06HD HDTMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced high cell density HDTMOS power FET is 60 AMPERES designed to withstand high energy in the avalanche and commuta- 60 VOLTS tio

MTP60N06HD www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.011 at VGS = 10 V 60 Material categorization 60 0.012 at VGS = 4.5 V 50 D TO-220AB G S D S G N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Lim

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP60N05HDL/D Product Preview MTP60N05HDL HDTMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced high cell density HDTMOS power FET is 60 AMPERES designed to withstand high energy in the avalanche and commuta- 50 VOLTS tion modes.

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP60N05HDL/D Product Preview MTP60N05HDL HDTMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced high cell density HDTMOS power FET is 60 AMPERES designed to withstand high energy in the avalanche and commuta- 50 VOLTS tion modes.