All MOSFET. MTP60N06HD Datasheet

 

MTP60N06HD Datasheet and Replacement


   Type Designator: MTP60N06HD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 136 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 570 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011(typ) Ohm
   Package: TO220AB
 

 MTP60N06HD substitution

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MTP60N06HD Datasheet (PDF)

 ..1. Size:217K  motorola
 mtp60n06hd.pdf pdf_icon

MTP60N06HD

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP60N06HD/DDesigner's Data SheetMTP60N06HDHDTMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced highcell density HDTMOS power FET is 60 AMPERESdesigned to withstand high energy in the avalanche and commuta- 60 VOLTS tio

 ..2. Size:826K  cn vbsemi
 mtp60n06hd.pdf pdf_icon

MTP60N06HD

MTP60N06HDwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.011 at VGS = 10 V 60 Material categorization:600.012 at VGS = 4.5 V 50DTO-220ABGSDSGN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Lim

 7.1. Size:171K  motorola
 mtp60n05hdl.pdf pdf_icon

MTP60N06HD

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP60N05HDL/DProduct PreviewMTP60N05HDLHDTMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced highcell density HDTMOS power FET is 60 AMPERESdesigned to withstand high energy in the avalanche and commuta- 50 VOLTStion modes.

 7.2. Size:166K  motorola
 mtp60n05hdlrev0.pdf pdf_icon

MTP60N06HD

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP60N05HDL/DProduct PreviewMTP60N05HDLHDTMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced highcell density HDTMOS power FET is 60 AMPERESdesigned to withstand high energy in the avalanche and commuta- 50 VOLTStion modes.

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Datasheet: MMDF3P03HDR , MT2300ACTR , MT4435ACTR , MT4606 , MT6680 , MTD20N03HDLT4G , MTD20N06HDLT4G , MTD3055EL , TK10A60D , MTP8N06 , N3PF06 , NCE0117 , NCE3010S , NCE3035G , NCE3080KA , NCE30H10 , NCE30H12K .

History: CM8N50F

Keywords - MTP60N06HD MOSFET datasheet

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