NIF5002NT3G Todos los transistores

 

NIF5002NT3G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NIF5002NT3G

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 2.7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 120 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.076 typ Ohm

Encapsulados: SOT223

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NIF5002NT3G datasheet

 ..1. Size:847K  cn vbsemi
 nif5002nt3g.pdf pdf_icon

NIF5002NT3G

NIF5002NT3G www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.076 at VGS = 10 V 4.5 RoHS 10 nC COMPLIANT 60 APPLICATIONS 0.085 at VGS = 4.5 V 3.5 Load Switches for Portable Devices D SOT-223-3 D G S D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unl

 5.1. Size:896K  cn vbsemi
 nif5002nt1g.pdf pdf_icon

NIF5002NT3G

NIF5002NT1G www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.076 at VGS = 10 V 4.5 RoHS 10 nC COMPLIANT 60 APPLICATIONS 0.085 at VGS = 4.5 V 3.5 Load Switches for Portable Devices D SOT-223-3 D G S D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unl

 6.1. Size:74K  onsemi
 nif5002n-d.pdf pdf_icon

NIF5002NT3G

NIF5002N Preferred Device Self-Protected FET with Temperature and Current Limit 42 V, 2.0 A, Single N-Channel, SOT-223 http //onsemi.com HDPlust devices are an advanced series of power MOSFETs V(BR)DSS which utilize ON Semiconductors latest MOSFET technology process RDS(ON) TYP ID MAX (Clamped) to achieve the lowest possible on-resistance per silicon area while 42 V 165 mW @ 10

 8.1. Size:105K  onsemi
 nif5003n.pdf pdf_icon

NIF5002NT3G

NIF5003N Preferred Device Self-Protected FET with Temperature and Current Limit 42 V, 14 A, Single N-Channel, SOT-223 http //onsemi.com http //onsemi.com HDPlus devices are an advanced series of power MOSFETs which utilize ON Semiconductors latest MOSFET technology process to VDSS ID MAX achieve the lowest possible on-resistance per silicon area while RDS(on) TYP (Clamped) (Lim

MOSTRAR MÁS

Otros transistores... NCE4953 , NCE55P04S , NCE55P05S , NCE60P25K , NDS331N-NL , NDS332P-NL , NDS9948-NL , NIF5002NT1G , 8N60 , NT2955G , NTB25P06T4G , NTD12N10-1G , NTD20N06LT4G , NTD2955T4G , NTD2955VT4G , NTD4860NT4G , NTD5807NT .

History: 2SK3574-Z | SI1028X | 2SK2957L | HY3810PM | SM4504NHKP | SM1102PSF | ISCNH327P

 

 

 

 

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