NIF5002NT3G PDF and Equivalents Search

 

NIF5002NT3G Specs and Replacement

Type Designator: NIF5002NT3G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.076 typ Ohm

Package: SOT223

NIF5002NT3G substitution

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NIF5002NT3G datasheet

 ..1. Size:847K  cn vbsemi
 nif5002nt3g.pdf pdf_icon

NIF5002NT3G

NIF5002NT3G www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.076 at VGS = 10 V 4.5 RoHS 10 nC COMPLIANT 60 APPLICATIONS 0.085 at VGS = 4.5 V 3.5 Load Switches for Portable Devices D SOT-223-3 D G S D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unl... See More ⇒

 5.1. Size:896K  cn vbsemi
 nif5002nt1g.pdf pdf_icon

NIF5002NT3G

NIF5002NT1G www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.076 at VGS = 10 V 4.5 RoHS 10 nC COMPLIANT 60 APPLICATIONS 0.085 at VGS = 4.5 V 3.5 Load Switches for Portable Devices D SOT-223-3 D G S D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unl... See More ⇒

 6.1. Size:74K  onsemi
 nif5002n-d.pdf pdf_icon

NIF5002NT3G

NIF5002N Preferred Device Self-Protected FET with Temperature and Current Limit 42 V, 2.0 A, Single N-Channel, SOT-223 http //onsemi.com HDPlust devices are an advanced series of power MOSFETs V(BR)DSS which utilize ON Semiconductors latest MOSFET technology process RDS(ON) TYP ID MAX (Clamped) to achieve the lowest possible on-resistance per silicon area while 42 V 165 mW @ 10 ... See More ⇒

 8.1. Size:105K  onsemi
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NIF5002NT3G

NIF5003N Preferred Device Self-Protected FET with Temperature and Current Limit 42 V, 14 A, Single N-Channel, SOT-223 http //onsemi.com http //onsemi.com HDPlus devices are an advanced series of power MOSFETs which utilize ON Semiconductors latest MOSFET technology process to VDSS ID MAX achieve the lowest possible on-resistance per silicon area while RDS(on) TYP (Clamped) (Lim... See More ⇒

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Detailed specifications: NCE4953, NCE55P04S, NCE55P05S, NCE60P25K, NDS331N-NL, NDS332P-NL, NDS9948-NL, NIF5002NT1G, 8N60, NT2955G, NTB25P06T4G, NTD12N10-1G, NTD20N06LT4G, NTD2955T4G, NTD2955VT4G, NTD4860NT4G, NTD5807NT

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