NTB25P06T4G Todos los transistores

 

NTB25P06T4G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NTB25P06T4G
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 61 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 35 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 200 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.048(typ) Ohm
   Paquete / Cubierta: TO263
 

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NTB25P06T4G Datasheet (PDF)

 ..1. Size:1447K  cn vbsemi
 ntb25p06t4g.pdf pdf_icon

NTB25P06T4G

NTB25P06T4Gwww.VBsemi.twP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () Max. ID (A) Qg (Typ.)Definition TrenchFET Power MOSFET0.048at VGS = - 10 V- 35- 60 60 100 % Rg and UIS Tested0.060at VGS = - 4.5 V - 30 Compliant to RoHS Directive 2002/95/ECAPPLICATIONSS Power Switch Lo

 6.1. Size:67K  onsemi
 ntb25p06-d.pdf pdf_icon

NTB25P06T4G

NTB25P06Power MOSFET-60 V, -27.5 A, P-Channel D2PAKDesigned for low voltage, high speed switching applications and towithstand high energy in the avalanche and commutation modes.Featureshttp://onsemi.com Pb-Free Packages are AvailableV(BR)DSS RDS(on) TYP ID MAXTypical Applications PWM Motor Controls-60 V 65 mW @ -10 V -27.5 A Power Supplies ConvertersP-Ch

 6.2. Size:129K  onsemi
 ntb25p06 nvb25p06.pdf pdf_icon

NTB25P06T4G

NTB25P06, NVB25P06Power MOSFET-60 V, -27.5 A, P-Channel D2PAKDesigned for low voltage, high speed switching applications and towithstand high energy in the avalanche and commutation modes.Featureshttp://onsemi.com AEC Q101 Qualified - NVB25P06 These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(on) TYP ID MAXTypical Applications-60 V 65 mW @ -10 V -27.5 A

 6.3. Size:125K  onsemi
 ntb25p06g nvb25p06.pdf pdf_icon

NTB25P06T4G

NTB25P06, NVB25P06Power MOSFET-60 V, -27.5 A, P-Channel D2PAKDesigned for low voltage, high speed switching applications and towithstand high energy in the avalanche and commutation modes.Featureshttp://onsemi.com AEC Q101 Qualified - NVB25P06 These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(on) TYP ID MAXTypical Applications-60 V 65 mW @ -10 V -27.5 A

MOSTRAR MÁS

Otros transistores... NCE55P05S , NCE60P25K , NDS331N-NL , NDS332P-NL , NDS9948-NL , NIF5002NT1G , NIF5002NT3G , NT2955G , IRF520 , NTD12N10-1G , NTD20N06LT4G , NTD2955T4G , NTD2955VT4G , NTD4860NT4G , NTD5807NT , NTD5865NL-1G , NTD5865NLT4G .

History: IRFZ44VZ | NCEP12T10F | IRLML2402PBF-1 | SL100N03R | STP3NK50Z | STF20NM50FD | UPA2726UT1A

 

 
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