All MOSFET. NTB25P06T4G Datasheet

 

NTB25P06T4G MOSFET. Datasheet pdf. Equivalent


   Type Designator: NTB25P06T4G
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 61 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 35 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 67 nC
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.048(typ) Ohm
   Package: TO263

 NTB25P06T4G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NTB25P06T4G Datasheet (PDF)

 ..1. Size:1447K  cn vbsemi
 ntb25p06t4g.pdf

NTB25P06T4G NTB25P06T4G

NTB25P06T4Gwww.VBsemi.twP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () Max. ID (A) Qg (Typ.)Definition TrenchFET Power MOSFET0.048at VGS = - 10 V- 35- 60 60 100 % Rg and UIS Tested0.060at VGS = - 4.5 V - 30 Compliant to RoHS Directive 2002/95/ECAPPLICATIONSS Power Switch Lo

 6.1. Size:67K  onsemi
 ntb25p06-d.pdf

NTB25P06T4G NTB25P06T4G

NTB25P06Power MOSFET-60 V, -27.5 A, P-Channel D2PAKDesigned for low voltage, high speed switching applications and towithstand high energy in the avalanche and commutation modes.Featureshttp://onsemi.com Pb-Free Packages are AvailableV(BR)DSS RDS(on) TYP ID MAXTypical Applications PWM Motor Controls-60 V 65 mW @ -10 V -27.5 A Power Supplies ConvertersP-Ch

 6.2. Size:129K  onsemi
 ntb25p06 nvb25p06.pdf

NTB25P06T4G NTB25P06T4G

NTB25P06, NVB25P06Power MOSFET-60 V, -27.5 A, P-Channel D2PAKDesigned for low voltage, high speed switching applications and towithstand high energy in the avalanche and commutation modes.Featureshttp://onsemi.com AEC Q101 Qualified - NVB25P06 These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(on) TYP ID MAXTypical Applications-60 V 65 mW @ -10 V -27.5 A

 6.3. Size:125K  onsemi
 ntb25p06g nvb25p06.pdf

NTB25P06T4G NTB25P06T4G

NTB25P06, NVB25P06Power MOSFET-60 V, -27.5 A, P-Channel D2PAKDesigned for low voltage, high speed switching applications and towithstand high energy in the avalanche and commutation modes.Featureshttp://onsemi.com AEC Q101 Qualified - NVB25P06 These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(on) TYP ID MAXTypical Applications-60 V 65 mW @ -10 V -27.5 A

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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