NTB25P06T4G MOSFET Datasheet: P-Ch, 60V, 35A. Full specification with pinout and replacement list

NTB25P06T4G Specs and Replacement

Type Designator: NTB25P06T4G

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 61 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 35 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.048 typ Ohm

Package: TO263

NTB25P06T4G substitution

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NTB25P06T4G datasheet

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NTB25P06T4G www.VBsemi.tw P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) Definition TrenchFET Power MOSFET 0.048at VGS = - 10 V - 35 - 60 60 100 % Rg and UIS Tested 0.060at VGS = - 4.5 V - 30 Compliant to RoHS Directive 2002/95/EC APPLICATIONS S Power Switch Lo... See More ⇒

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NTB25P06 Power MOSFET -60 V, -27.5 A, P-Channel D2PAK Designed for low voltage, high speed switching applications and to withstand high energy in the avalanche and commutation modes. Features http //onsemi.com Pb-Free Packages are Available V(BR)DSS RDS(on) TYP ID MAX Typical Applications PWM Motor Controls -60 V 65 mW @ -10 V -27.5 A Power Supplies Converters P-Ch... See More ⇒

6.2. Size:129K onsemi
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