NTD4860NT4G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTD4860NT4G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 205 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 80 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 11 nS
Cossⓘ - Capacitancia de salida: 525 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.005(typ) Ohm
Paquete / Cubierta: TO252
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NTD4860NT4G Datasheet (PDF)
ntd4860nt4g.pdf

NTD4860NT4Gwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.005 at VGS = 10 V 8030 31 nC0.006 at VGS = 4.5 V 68APPLICATIONSD OR-ingTO-252 Server DC/DCGG D STop ViewSN-Channel MOSFETABS
ntd4860n.pdf

NTD4860NPower MOSFET25 V, 65 A, Single N-Channel, DPAK/IPAKFeatures Trench Technology Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX These are Pb-Free Devices7.5 mW @ 10 V25 V65 A11.1 mW @ 4.5 VApplications VCORE App
ntd4860n-1g ntd4860n.pdf

NTD4860NPower MOSFET25 V, 65 A, Single N--Channel, DPAK/IPAKFeatures Trench Technology Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These are Pb--Free Devices7.5 m @10V25 V65 AApplications11.1 m @4.5 V VCORE A
ntd4863n-1g ntd4863n-d.pdf

NTD4863NPower MOSFET25 V, 49 A, Single N--Channel, DPAK/IPAKFeatures Trench Technology Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These are Pb--Free Devices9.3 m @10V25 V49 AApplications14 m @4.5 V VCORE App
Otros transistores... NIF5002NT1G , NIF5002NT3G , NT2955G , NTB25P06T4G , NTD12N10-1G , NTD20N06LT4G , NTD2955T4G , NTD2955VT4G , MMIS60R580P , NTD5807NT , NTD5865NL-1G , NTD5865NLT4G , NTD6416ANT , NTE4153NT1G , NTF3055-100T , NTMD3P03R2G , NTR0202PLT1G .
History: STL7N60M2 | PV5G3EA | APT30M17JLL | FQD8P10TM-F085 | WMN07N80M3 | SSF70R1K2S2E | SFQ230N100
History: STL7N60M2 | PV5G3EA | APT30M17JLL | FQD8P10TM-F085 | WMN07N80M3 | SSF70R1K2S2E | SFQ230N100



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