NTD4860NT4G MOSFET Datasheet: N-Ch, 30V, 80A. Full specification with pinout and replacement list

NTD4860NT4G Specs and Replacement

Type Designator: NTD4860NT4G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 205 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 525 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.005 typ Ohm

Package: TO252

NTD4860NT4G substitution

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NTD4860NT4G datasheet

..1. Size:844K cn vbsemi
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NTD4860NT4G www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.005 at VGS = 10 V 80 30 31 nC 0.006 at VGS = 4.5 V 68 APPLICATIONS D OR-ing TO-252 Server DC/DC G G D S Top View S N-Channel MOSFET ABS... See More ⇒

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NTD4860N Power MOSFET 25 V, 65 A, Single N-Channel, DPAK/IPAK Features Trench Technology Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX These are Pb-Free Devices 7.5 mW @ 10 V 25 V 65 A 11.1 mW @ 4.5 V Applications VCORE App... See More ⇒

6.2. Size:282K onsemi
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NTD4860N Power MOSFET 25 V, 65 A, Single N--Channel, DPAK/IPAK Features Trench Technology Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX These are Pb--Free Devices 7.5 m @10V 25 V 65 A Applications 11.1 m @4.5 V VCORE A... See More ⇒

8.1. Size:296K onsemi
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NTD4863N Power MOSFET 25 V, 49 A, Single N--Channel, DPAK/IPAK Features Trench Technology Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX These are Pb--Free Devices 9.3 m @10V 25 V 49 A Applications 14 m @4.5 V VCORE App... See More ⇒