Справочник MOSFET. NTD4860NT4G

 

NTD4860NT4G MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NTD4860NT4G
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 205 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 80 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 61 nC
   trⓘ - Время нарастания: 11 ns
   Cossⓘ - Выходная емкость: 525 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.005(typ) Ohm
   Тип корпуса: TO252

 Аналог (замена) для NTD4860NT4G

 

 

NTD4860NT4G Datasheet (PDF)

 ..1. Size:844K  cn vbsemi
 ntd4860nt4g.pdf

NTD4860NT4G NTD4860NT4G

NTD4860NT4Gwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.005 at VGS = 10 V 8030 31 nC0.006 at VGS = 4.5 V 68APPLICATIONSD OR-ingTO-252 Server DC/DCGG D STop ViewSN-Channel MOSFETABS

 6.1. Size:118K  onsemi
 ntd4860n.pdf

NTD4860NT4G NTD4860NT4G

NTD4860NPower MOSFET25 V, 65 A, Single N-Channel, DPAK/IPAKFeatures Trench Technology Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX These are Pb-Free Devices7.5 mW @ 10 V25 V65 A11.1 mW @ 4.5 VApplications VCORE App

 6.2. Size:282K  onsemi
 ntd4860n-1g ntd4860n.pdf

NTD4860NT4G NTD4860NT4G

NTD4860NPower MOSFET25 V, 65 A, Single N--Channel, DPAK/IPAKFeatures Trench Technology Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These are Pb--Free Devices7.5 m @10V25 V65 AApplications11.1 m @4.5 V VCORE A

 8.1. Size:296K  onsemi
 ntd4863n-1g ntd4863n-d.pdf

NTD4860NT4G NTD4860NT4G

NTD4863NPower MOSFET25 V, 49 A, Single N--Channel, DPAK/IPAKFeatures Trench Technology Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These are Pb--Free Devices9.3 m @10V25 V49 AApplications14 m @4.5 V VCORE App

 8.2. Size:100K  onsemi
 ntd4865n.pdf

NTD4860NT4G NTD4860NT4G

NTD4865NPower MOSFET25 V, 44 A, Single N-Channel, DPAK/IPAKFeatures Trench Technology Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These are Pb-Free Devices10.9 mW @ 10 V25 V44 AApplications17.2 mW @ 4.5 V VCORE A

 8.3. Size:308K  onsemi
 ntd4865n-1g.pdf

NTD4860NT4G NTD4860NT4G

NTD4865NPower MOSFET25 V, 44 A, Single N--Channel, DPAK/IPAKFeatures Trench Technology Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These are Pb--Free Devices10.9 m @10V25 V44 AApplications17.2 m @4.5 V VCORE

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