NTD6416ANT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NTD6416ANT
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 83 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 25 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 180 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.06(typ) Ohm
   Paquete / Cubierta: TO252

Búsqueda de reemplazo de MOSFET NTD6416ANT

NTD6416ANT Datasheet (PDF)

..1. Size:356K cn vbsemi
ntd6416ant.pdf

NTD6416ANTwww.VBsemi.comN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ.) 100 % UIS tested0.055 at VGS = 10 V 250.057 at VGS = 4.5 V 100 25 21nC0.070 at VGS = 2.5 V 18APPLICATIONS Primary side switchDTO-252GG D SSN-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TA = 25 C, un

5.1. Size:129K onsemi
ntd6416an nvd6416an.pdf

NTD6416AN, NVD6416ANMOSFET Power,N-Channel100 V, 17 A, 81 mWFeatureshttp://onsemi.com Low RDS(on) High Current CapabilityID MAX 100% Avalanche TestedV(BR)DSS RDS(on) MAX (Note 1) NVD Prefix for Automotive and Other Applications Requiring100 V 81 mW @ 10 V 17 AUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable These De

5.2. Size:141K onsemi
ntd6416an.pdf

NTD6416ANN-Channel Power MOSFET100 V, 17 A, 81 mWFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSID MAXCompliantV(BR)DSS RDS(on) MAX (Note 1)MAXIMUM RATINGS (TJ = 25C unless otherwise noted)100 V 81 mW @ 10 V 17 AParameter Symbol Value UnitDrain-to-Source

5.3. Size:137K onsemi
ntd6416an-1g.pdf

NTD6416AN, NVD6416ANN-Channel Power MOSFET100 V, 17 A, 81 mWFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com 100% Avalanche Tested AEC Q101 Qualified - NVD616ANID MAX These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(on) MAX (Note 1)100 V 81 mW @ 10 V 17 AMAXIMUM RATINGS (TJ = 25C unless otherwise noted)Parameter Symbol Value

5.4. Size:149K onsemi
ntd6416anl.pdf

NTD6416ANLN-Channel Power MOSFET100 V, 19 A, 74 mWFeatures Low RDS(on)http://onsemi.com High Current Capability 100% Avalanche Tested These are Pb-Free DevicesV(BR)DSS RDS(on) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)100 V 74 mW @ 10 V 19 AParameter Symbol Value UnitDrain-to-Source Voltage VDSS 100 VDGate-to-Source Voltage - Continuo

5.5. Size:79K onsemi
ntd6416anl nvd6416anl.pdf

NTD6416ANL, NVD6416ANLN-Channel Power MOSFET100 V, 19 A, 74 mWFeatures Low RDS(on)www.onsemi.com High Current Capability 100% Avalanche TestedV(BR)DSS RDS(on) MAX ID MAX NVD Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101100 V 74 mW @ 10 V 19 AQualified and PPAP Capable These Devices are Pb-Free

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

Liste

Recientemente añadidas las descripciónes de los transistores: