NTD6416ANT PDF and Equivalents Search

 

NTD6416ANT Specs and Replacement

Type Designator: NTD6416ANT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 25 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 typ Ohm

Package: TO252

NTD6416ANT substitution

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NTD6416ANT datasheet

 ..1. Size:356K  cn vbsemi
ntd6416ant.pdf pdf_icon

NTD6416ANT

NTD6416ANT www.VBsemi.com N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) RDS(on) ( )ID (A) Qg (Typ.) 100 % UIS tested 0.055 at VGS = 10 V 25 0.057 at VGS = 4.5 V 100 25 21nC 0.070 at VGS = 2.5 V 18 APPLICATIONS Primary side switch D TO-252 G G D S S N-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS (TA = 25 C, un... See More ⇒

 5.1. Size:129K  onsemi
ntd6416an nvd6416an.pdf pdf_icon

NTD6416ANT

NTD6416AN, NVD6416AN MOSFET Power, N-Channel 100 V, 17 A, 81 mW Features http //onsemi.com Low RDS(on) High Current Capability ID MAX 100% Avalanche Tested V(BR)DSS RDS(on) MAX (Note 1) NVD Prefix for Automotive and Other Applications Requiring 100 V 81 mW @ 10 V 17 A Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These De... See More ⇒

 5.2. Size:141K  onsemi
ntd6416an.pdf pdf_icon

NTD6416ANT

NTD6416AN N-Channel Power MOSFET 100 V, 17 A, 81 mW Features Low RDS(on) High Current Capability http //onsemi.com 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS ID MAX Compliant V(BR)DSS RDS(on) MAX (Note 1) MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 100 V 81 mW @ 10 V 17 A Parameter Symbol Value Unit Drain-to-Source ... See More ⇒

 5.3. Size:137K  onsemi
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NTD6416ANT

NTD6416AN, NVD6416AN N-Channel Power MOSFET 100 V, 17 A, 81 mW Features Low RDS(on) High Current Capability http //onsemi.com 100% Avalanche Tested AEC Q101 Qualified - NVD616AN ID MAX These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) MAX (Note 1) 100 V 81 mW @ 10 V 17 A MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) Parameter Symbol Value ... See More ⇒

Detailed specifications: NTD12N10-1G, NTD20N06LT4G, NTD2955T4G, NTD2955VT4G, NTD4860NT4G, NTD5807NT, NTD5865NL-1G, NTD5865NLT4G, IRLB3034, NTE4153NT1G, NTF3055-100T, NTMD3P03R2G, NTR0202PLT1G, NTR4502PT1G, NTS2101PT1G, NTS4101PT1G, P0603BVG

Keywords - NTD6416ANT MOSFET specs

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