RFD15P05SM Todos los transistores

 ..1. Size:828K  cn vbsemi
 rfd15p05sm.pdf

RFD15P05SM www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A) Qg (Typ) 100 % UIS Tested 0.061 at VGS = - 10 V - 30 APPLICATIONS - 60 10 0.072 at VGS = - 4.5 V - 26 Load Switch S TO-252 G G D S Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parameter Sy

 6.1. Size:87K  intersil
 rfd15p05-sm rfp15p05.pdf

RFD15P05, RFD15P05SM, RFP15P05 Data Sheet July 1999 File Number 2387.5 15A, 50V, 0.150 Ohm, P-Channel Power Features MOSFETs 15A, 50V These are P-Channel power MOSFETs manufactured using rDS(ON) = 0.150 the MegaFET process. This process which uses feature Temperature Compensating PSPICE Model sizes approaching those of LSI integrated circuits, gives optimum utilizatio

 6.2. Size:805K  cn vbsemi
 rfd15p05.pdf

RFD15P05 www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) 100 % UIS Tested 0.066 at VGS = - 10 V - 20 APPLICATIONS - 60 40 nC at VGS = - 4.5 V - 18 0.080 Load Switch TO-251 S G D P-Channel MOSFET G D S Top View ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) Par

 7.1. Size:87K  intersil
 rfd15p06-sm rfp15p06.pdf

RFD15P06, RFD15P06SM, RFP15P06 Data Sheet July 1999 File Number 3988.3 15A, 60V, 0.150 Ohm, P-Channel Power Features MOSFETs 15A, 60V These P-Channel power MOSFETs are manufactured using rDS(ON) = 0.150 the MegaFET process. This process which uses feature Temperature Compensating PSPICE Model sizes approaching those of LSI integrated circuits, gives optimum utilizatio