RFD15P05SM Specs and Replacement
Type Designator: RFD15P05SM
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 34 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 120 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.061 typ Ohm
Package: TO252
RFD15P05SM substitution
- MOSFET ⓘ Cross-Reference Search
RFD15P05SM datasheet
rfd15p05sm.pdf
RFD15P05SM www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A) Qg (Typ) 100 % UIS Tested 0.061 at VGS = - 10 V - 30 APPLICATIONS - 60 10 0.072 at VGS = - 4.5 V - 26 Load Switch S TO-252 G G D S Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parameter Sy... See More ⇒
rfd15p05-sm rfp15p05.pdf
RFD15P05, RFD15P05SM, RFP15P05 Data Sheet July 1999 File Number 2387.5 15A, 50V, 0.150 Ohm, P-Channel Power Features MOSFETs 15A, 50V These are P-Channel power MOSFETs manufactured using rDS(ON) = 0.150 the MegaFET process. This process which uses feature Temperature Compensating PSPICE Model sizes approaching those of LSI integrated circuits, gives optimum utilizatio... See More ⇒
rfd15p05.pdf
RFD15P05 www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) 100 % UIS Tested 0.066 at VGS = - 10 V - 20 APPLICATIONS - 60 40 nC at VGS = - 4.5 V - 18 0.080 Load Switch TO-251 S G D P-Channel MOSFET G D S Top View ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) Par... See More ⇒
rfd15p06-sm rfp15p06.pdf
RFD15P06, RFD15P06SM, RFP15P06 Data Sheet July 1999 File Number 3988.3 15A, 60V, 0.150 Ohm, P-Channel Power Features MOSFETs 15A, 60V These P-Channel power MOSFETs are manufactured using rDS(ON) = 0.150 the MegaFET process. This process which uses feature Temperature Compensating PSPICE Model sizes approaching those of LSI integrated circuits, gives optimum utilizatio... See More ⇒
Detailed specifications: NTS4101PT1G, P0603BVG, P120NF10, P60NF06, P80NF55-08, PHB32N06, PHD78NQ03L, PHK12NQ03L, IRF3205, RFP6P08, RJK0822SPN, RRS130N03, RSS100N03T, SDM4953A, SI1539CDL-T1, SI1553CDL-T1-GE3, SI1555DL-T1
Keywords - RFD15P05SM MOSFET specs
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