SI2305DS-T1-GE3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SI2305DS-T1-GE3 Datasheet (PDF)

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SI2305DS-T1-GE3www.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICAT

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SMD Type MOSFETSMD TypeP-Channel MOSFETSI2305DS (KI2305DS)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.1 Features3 VDS (V) = -8V RDS(ON)0.052 (VGS = -4.5V) RDS(ON)0.071 (VGS = -2.5V)1 2D +0.02+0.10.15 -0.020.95 -0.1 RDS(ON)0.108 (VGS = -1.8V)+0.11.9-0.21. GateG 2. Source3. DrainS Absolute Maximum Ratings Ta

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Si2305DSVishay SiliconixP-Channel 1.25-W, 1.8-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.052 at VGS = - 4.5 V 3.5 TrenchFET Power MOSFETs: 1.8 V Rated0.071 at VGS = - 2.5 V - 8 30.108 at VGS = - 1.8 V 2TO-236 (SOT-23) G 1 3 D S 2 Top View Si2305DS (A5)* * Mark

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SMD Type MOSFETSMD TypeP-Channel MOSFETSI2305DS (KI2305DS)SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13 Features VDS (V) = -8V RDS(ON)0.052 (VGS = -4.5V)1 2 RDS(ON)0.071 (VGS = -2.5V)D +0.1+0.050.95 -0.1 0.1 -0.01 RDS(ON)0.108 (VGS = -1.8V) +0.11.9 -0.11. Gate2. SourceG 3. DrainS Absolute Maximum Ratings Ta = 25

Otros transistores... SI2301ADS-T1 , SI2301BDS-T1-GE3 , SI2301CDS-T1 , SI2301DS-T1-GE3 , SI2302CDS-T1-GE3 , SI2302DS-T1-GE3 , SI2305ADS-T1-GE3 , SI2305CDS-T1-GE3 , IRFP250N , SI2309CDS-T1-GE3 , SI2312BDS-T1 , SI2312CDS-T1-GE3 , SI2324DS-T1-GE3 , SI2333CDS-T1-GE3 , SI2333DDS-T1 , SI2333DS-T1-GE3 , SI2335DS-T1 .